Optical And Structural Characteristics Of Nd : Yvo4 Film On Sio2/Si Substrate Fabricated By Pulsed Laser Deposition

fangming wang,Shining Zhu,Kokwai Cheah
DOI: https://doi.org/10.1063/1.2192147
IF: 2.877
2006-01-01
Journal of Applied Physics
Abstract:The Nd:YVO4 thin films with a-axis preferred orientation have been grown on SiO2/Si substrates using pulsed laser deposition. Their structural, spectroscopic ellipsometric, and emission characteristics have been systematically studied. The lower ambient oxygen pressure during deposition would lead to better crystallinity in the films. The fluorescence at 1064.8 and 1342 nm in the Nd:YVO4 films was excited with an 808 nm diode laser as pump. The results show that the highly a-axis oriented Nd:YVO4 films grown on Si substrates may have potential applications in actively integrated circuits. (C) 2006 American Institute of Physics.
What problem does this paper attempt to address?