Nd-Doped Gdvo4 Films Prepared By Pulsed-Laser Deposition On Sio2/Si Substance

Zhenggao Dong,Fei Wang,Yaxian Fan,Peng Lü,Shining Zhu,Puikong Lim,Tongbor Tang
DOI: https://doi.org/10.1063/1.1898439
IF: 4
2005-01-01
Applied Physics Letters
Abstract:Nd-doped GdVO4(Nd: GdVO4) films with a-axis preferred orientation were fabricated on SiO2/Si substrate by pulsed-laser deposition. Fluorescences at around 1065.0 and 1342.5 nm, corresponding to F-4(3/2) -> I-4(11/2) and F-4(3/2) -> I-4(13/2) transitions, respectively, were excited simultaneously with an 808 nm diode laser. Waveguide behaviors in the film were investigated by using the prism coupling technique at the wavelength of 632.8 nm. Both TE and TM mode spectra revealed that favorable light confinements were achieved within the Nd: GdVO4 waveguide layer. Additionally, the optically anisotropic properties of the film were studied in detail. (C) 2005 American Institute Of Physics.
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