Enhanced Theoretical Lower Limit for the Specific On-Resistance of a Silicon Balanced Superjunction
Vijaya Kumar Gurugubelli,P. N. S. Bhargav
DOI: https://doi.org/10.1109/ted.2024.3393937
IF: 3.1
2024-05-25
IEEE Transactions on Electron Devices
Abstract:We propose a simple yet highly effective analytical model for the electric field distribution along the critical path in a balanced superjunction (SJ) power device. Using this electric field model for silicon SJ devices, we relate the breakdown voltage ( ) to the pillar parameters, namely width (2W), length (L), and doping (N). Furthermore, we derive simple closed-form expressions for the optimum design parameters, and , which minimize the specific ON-resistance ( ) for a target and a given W. Analytical formulas for the optimum and critical electric field are also provided. We show that our predictions of optimum are lower than the lowest predictions made till date. Moreover, our model achieves the ideal relations of SJ, i.e., , and independent of , leading to , except at high in low W devices. Our theory unveils a crucial insight that the total charge ( ) of an optimum device remains constant for a target , regardless of W. Our results greatly simplify the design process, avoiding the need of using iterative solvers. We validate our model using 2-D numerical simulations.
engineering, electrical & electronic,physics, applied