Abstract:A two-dimensional (2-D) analytical model of reverse breakdown voltage for 4H-SiC super junction structure is proposed. An analytical expression of reverse breakdown voltage is derived by solving the Poisson equation. This expression depicts the relationship between reverse breakdown voltage and device parameters such as doping concentration, length, width and temperature. The relationship of Ron∝VB 1.4 between on-resistance and breakdown voltage is derived by optimizing Ron. The proposed model is discussed and the result shows good agreement between numerical simulation and the model.

Analytical model of reverse breakdown voltage for 4H-SiC super junction structure