Abstract:Photoluminescence (PL) of n-InN grown by molecular beam epitaxy with Hall concentrations from 3.6 x 10(17) to 1.0 x 10(18) cm(-3) demonstrates new features as compared with that of the samples of previous generation which are characterized by a higher carrier concentration. The striking dependences of PL spectra on carrier concentration, temperature, and excitation density give evidences of a fast energy relaxation rate of photoholes and their equilibrium distribution over localized states. The well resolved structure consisting of three peaks was observed in the PL spectra of these samples in the energy interval from 0.50 to 0.67 eV at liquid helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da = 0.050-0.055 eV and the other one is attributable to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh = 0.005-0.010 eV and/or to the states of Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. Relative intensities of two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. At room temperature, the band-to-band recombination of free holes and electrons dominates in PL. Experimental results on PL and absorption are described by the model calculations under the assumptions of the band gap equal to 0.665-0.670 eV at zero temperature and zero carrier concentration and the non-parabolic conduction band with the effective mass at Gamma-point equal to 0.07 of free electron mass. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth and Depth Dependence of Visible Luminescence in Wurtzite Inn Epilayers

Temperature-Dependent Optical Properties of Wurtzite Inn

Photoluminescence Spectroscopy Of Nearly Defect-Free Inn Microcrystals Exhibiting Nondegenerate Semiconductor Behaviors

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Observation of Visible Luminescence from Indium Nitride at Room Temperature

Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns

Steady and Transient Optical Properties of Cubic Ingan Epilayers

Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy

Photoluminescence of N‐inn with Low Electron Concentrations

Multi-wavelength light emission from InGaN nanowires on pyramid-textured Si(100) substrate grown by stationary plasma-assisted molecular beam epitaxy

Photoluminescence and Absorption in InGaN Films with InN Segregation

Study on the Photoluminescence Properties of Inn Films

Optical Bleaching Effect in Inn Epitaxial Layers

Midinfrared Photoluminescence Up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of Inas Nanowires

Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

Photoluminescence study of blue light LIED epitaxial wafer during growth by MOCVD

Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy

20 Mev-Deep Donor Level in Inn Film of 0.76 Ev Band Gap Grown by Plasma-Assisted Nitrogen Source

Investigation of Photoluminescence and Photoreflectance in MBE-Grown GaInNAs/GaAs QWs

Time-resolved and Temperature-Varied Photoluminescence Studies of InGaN/GaN Multiple Quantum Well Structures