A Novel SOI High Voltage Device Structure with a Partial Locating Charge Trench

Xiaorong Luo,Bo Zhang,Zhaoji Li,Xinwei Tang

DOI: https://doi.org/10.3969/j.issn.1674-4926.2006.01.024

2006-01-01

Abstract:A novel high voltage device structure - partial locating charge trench SOI (PTSOI) is proposed. Interface charges changing with the drain voltage are introduced in the trench. The charges make the vertical electric field of the buried oxide increase from about 3ESi,C to the critical breakdown electric field of SiO2. In addition, the depletion layer spreads into the substrate through the silicon window. Hence the breakdown voltage is enhanced. The self-heating effect of SOI devices is alleviated as a result of the silicon window. The breakdown characteristics and thermal characteristics are researched by a 2D device simulator. A breakdown voltage greater than 700 V can be obtained for the PTSOI device with a 2 μm thick Si layer and 1 μm buried oxide. The maximum temperature of the PTSOI device is 6 K and 25 K lower than that of TSOIs with 1 μm and 3 μm thick buried oxides, respectively.