Abstract:GaN-based heterojunction field effect transistors (HFETs) are strong contenders to replace vacuum tube-based devices in the high power, and high frequency arena. However, the piezoelectric stain, exploited to generate high density two-dimensional electron gases (2DEGs) in AlGaN/GaN devices is not necessarily desirable nor might it bode well in terms of device reliability. By using lattice-matched InAlN as the barrier, even higher densities of 2DEG and now respectable DC and RF performance can be achieved while at the same time avoiding the strain and subsequent reliability issues in the devices. However, little work has been done in identification of trapping mechanisms in the InAlN-based devices. The trapping is at the heart of the reduced RF performance of all the GaN-based devices, limiting the maximum attainable RF power. In this work, transient current spectroscopy, which observes the dynamics of the drain current during gate lag measurements, is utilized to ascertain information about the trapping levels, cross sections, and spatial locations of traps in the InAlN-based devices. Preliminary measurements indicate that one of the traps identified in this work (at 0.12eV) is similar to one measured by deep level transient spectroscopy (DLTS) in similar structures. Investigations of this type are imperative for the further development and implementation of this highly promising material system.

Numerical Explanation of Slow Transients in an AlGaN/GaN HEMT

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate

Trap-Related Current Collapse Effects in GaN HEMTs

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Transient Current Spectroscopy of Lattice Matched Inaln/Aln/Gan Hfets for Identification of Traps Resulting in Gate Lag

Study on the Charging Current of Surface Traps in AlGaN/GaN High Electron Mobility Transistors with a Slot Gate Structure

Observation Of Self-Recoverable Gate Degradation In P-Gan Algan/Gan Hemts After Long-Term Forward Gate Stress: The Trapping & Detrapping Dynamics Of Hole/Electron

Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Spatially-resolved Spectroscopic Measurements of Ec − 0.57 Ev Traps in AlGaN/GaN High Electron Mobility Transistors

Charge Detrapping on Gate Edge of AlGaN/GaN HEMT Under Drain Stress