Abstract:We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to extract valuable quantitative information of the QD. The QD shows very regular Coulomb blockade (CB) resonances over a large gate voltage range. By analyzing the resonance line shapes, we map the evolution of the tunnel couplings from the few to the many electron regime, with electrically tunable tunnel couplings from <1 ${\mu}$eV to >600 ${\mu}$eV, and a transition from the temperature to the lifetime broadened regime. The InP segments form tunnel barriers with almost fully symmetric tunnel couplings and a barrier height of ~350 meV. All of these findings can be understood in great detail based on the deterministic material composition and geometry. Our results demonstrate that integrated InAs/InP QDs provide a promising platform for electron tunneling spectroscopy in InAs nanowires, which can readily be contacted by a variety of superconducting materials to investigate subgap states in proximitized NW regions, or be used to characterize thermoelectric nanoscale devices in the quantum regime.

Resonant tunneling through single InAs quantum dot at room temperature

Metastable state involved resonant tunneling through single InAs/GaAs quantum dot

Resonant Tunnelling Via Inas Self-Organized Quantum Dot States

The Photocurrent of Resonant Tunneling Diode Controlled by the Charging Effects of Quantum Dots

Control of charging in resonant tunneling through InAs nanocrystal quantum dots

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector

Detection of Single-Electron Charging in an Individual InAs Quantum Dot by Noncontact Atomic-Force Microscopy.

Top-gate defined double quantum dots in InAs nanowires

Direct Observation of Single InAs/GaAs Quantum Dot Spectrum Without Mesa or Mask

A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire

Imaging a 1-electron InAs quantum dot in an InAs/InP nanowire

Tunable few electron quantum dots in InAs nanowires

Tunneling Resonances and Andreev Reflection Through an Interaction Quantum Dot Coupled with Two Half Metals and A Superconductor

Carrier Tunneling Effects on the Temperature Dependent Photoluminescence of Inas/Gaas Quantum Dot: Simulation and Experiment

Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot

Optically Modulated Bistability in Quantum Dot Resonant Tunneling Diodes

Current Resonances and Current Platforms in a Two-Level InAs Quantum Dot with Asymmetric Terahertz Irradiations

Crossover from Coulomb Blockade to Ballistic Transport in InAs Nanowire Devices

Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots

Self-aligned charge read-out for InAs nanowire quantum dots