Abstract:Vertically aligned N-doped ZnO microrods have been homoepitaxially grown on a high-quality ZnO template via chemical vapor transport method without employing any catalysts. In spite of the incorporation of nitrogen, the as-grown microrods exhibited excellent crystalline and optical quality, and the behavior of intrinsic point defects and impurity-related defects have been investigated in detail by the temperature-dependent photoluminescence spectra. The emissions at 3.377, 3.368, and 3.363eV are ascribed to free excitons, surface bound excitons and excitons bound to neutral shallow donors: zinc interstitials, respectively. The emissions at 3.359, 3.311, and 3.240eV correspond to the radiative recombination of excitons bound to neutral acceptors, free electrons to acceptors and donor acceptor pairs, all of which are originated from the same shallow acceptor of zinc vacancy clusters with its energy level of about 126meV above the valence band maximum. The isolated zinc vacancy is a deep acceptor, which results in the emission at 3.318eV and the green band emissions. This study suggests that the intrinsic point defects play an extremely important role in optical properties of ZnO besides the external dopants and the understanding of intrinsic defects is crucial to get stable p-type conductivity and finally realize a ZnO homojunction for optoelectronic applications.

Deep-level Emissions Influenced by O and Zn Implantations in ZnO

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Preparation and Photoluminescence of ZnO with Nanostructure by Hollow-Cathode Discharge

Emission Bands of Nitrogen-Implantation Induced Luminescent Centers in ZnO Crystals: Experiment and Theory

Structural, Optical and Half-Metallic Properties of Mn and As Co-Implanted ZnO Thin Films

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Electrical Characterization of N+-implanted N-Type ZnO Single Crystals: P-N Homojunction and Deep Level Defects

Thermal-desorption Induced Enhancement and Patterning of Ultraviolet Emission in Chemically Grown ZnO

Enhancement And Patterning Of Ultraviolet Emission In Zno With An Electron Beam

Structural and Optical Properties of H Implanted ZnO

Who Make Transparent ZnO Colorful? – Ion Implantation and Thermal Annealing Effects

Zinc Vacancy-Related Complex and Its Abnormal Photoluminescence in Zn+-implanted ZnO Single Crystals

Effects of 120keV nitrogen and its fluence on the structural, electrical, and optical properties of ZnO film

Improved Internal Quantum Efficiency of Photoluminescence in Zinc Ion-Implanted ZnO Bulk Crystals

Preparation of ZnMnO by ion implantation and its spectral characterization

Photoluminescence Spectra of Nano-Structured ZnO Thin Films

Temperature-Dependent Photoluminescence of Nanostructured ZnO

Identification of about 100-Mev Acceptor Level in ZnO Nanostructures by Photoluminescence

Photoluminescence Study of ZnO Nano-Islands

Zinc Vacancy Related Emission in Homoepitaxial N-doped ZnO Microrods