Improvement in the Electrical Properties of Diamond Films for Radiation Dosimeter

Xiaoming Liao,Junguo Ran,Li Gou,Baohui Su,Jin Zhang,Bing Wang
DOI: https://doi.org/10.3321/j.issn:1002-185X.2005.z2.037
2005-01-01
Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
Abstract:The low resistivity on the surface can highly deteriorate the electrical properties of the diamond thin films used in radiation dosimeter. The aim of this study was to develop new post-treatment procedures to get better electrical properties of the as-grown diamond films. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) characterization show that in-situ oxygen plasma processing can decrease the content of graphite and C - H bond in the as-grown films more effectively than in-situ nitrogen plasma processing. The resistivity of the films treated by optimized oxygen plasma can be increased more than four orders of magnitude characterized by dark current-voltage curve. In addition, the X-ray flux-photocurrent characterization also shows that in-situ plasma post-treatment can improve the diamond films sensitivity to X-ray irradiation. The results show that the in-situ plasma post-treatment is an effective and economical means to improve the electrical properties of a new type dosimeter based on diamond thin films.
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