Abstract:Reactive ion etching (RIE) using fluorinated gases, such as admixtures of CF4 with O2, has been conducted on sputter deposited films of SiC. For comparison purposes, the same experiments with SiO2 films and Si wafers have been conducted. The influence of rf power, pressure, and O2 concentration on etch rate in CF4+O2, SF6+He, and Ar gases has been investigated. RIE mechanisms were studied using in situ monitoring of excited fluorine emission intensity and dc self-bias at the lower electrode. Typical etch rates of Si, SiO2, and SiC are 1220, 600, and 375 Å/min in CF4+4% O2; 8850, 500, and 560 Å/min in SF6+50% He; and 340, 280, and 270 Å/min in Ar, respectively, at P=200 W, p=20 mTorr, and 300 K. Under these conditions the dc self-bias levels are −396 V for CF4+4% O2, −350 V for SF6+50% He, and −414 V for Ar. In both CF4+4% O2 and SF6+50% He, the etch rates of Si, SiO2, and SiC all increase monotonically with the rf power. However, with increasing pressure the Si etch rate increases while the etch rates of SiO2 and SiC decrease. Since the dc self-bias varies proportionally with power and inversely with pressure, it is clear that the etching of Si is chemical reaction rate controlled. On the other hand, the etch rate of SiC depends on the ion bombardment energy and is thus dominantly controlled by a physical reaction. The SiC etch rate exhibits a weak dependence on O2 concentration in CF4+O2 mixtures. The dc self-bias is not affected by increasing O2 concentration, but the SiC etch rate is slightly enhanced. This suggests that a certain etching inhibitor layer exists on the surface of SiC, which can weakly react with the O2 plasma. Auger electron spectroscopy data indicates that this layer consists of carbon atoms.

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