Abstract:Ultra-precision thinning technology using workpiece self-rotational grinding followed by chemical mechanical polishing (CMP) is extensively applied in the integrated circuit manufacturing process, which enables to obtain large size ultra-thin silicon wafers with high material removal rate and low damage layer thickness. However, an in-depth understanding of the influence caused by ground surface topography on material removal mechanism in silicon CMP process has not been revealed yet. This work systematically investigates the contact characteristics of the wafer-pad interface and corrosion behaviors of the ground silicon wafer immersed in polishing solution. Firstly, some silicon wafers are ground using different wheels and subsequently polished. The material removal depth during the whole CMP process is measured. Then, the intrinsic model of polishing pad is determined via mechanical property tests. A finite element method is adopted to evaluate the contact status, displacement distortion and stress distribution at the contact region between pad and ground wafer surface. Moreover, the chemical reaction mechanism between ground silicon wafer and polishing solution is revealed by utilizing X-ray photoelectron spectroscopy and electrochemical analysis. The influence of wafer surface topography on corrosion resistance in CMP process is illustrated. Finally, corresponding experimental results are explained from an atomic scale by a ReaxFF reactive molecular dynamics simulation model. This presented study demonstrates the corrosion promotion principle of ground silicon wafer in CMP process.

The variation in surface layer in CMP

The crystallographic change in sub-surface layer of the silicon single crystal polished by chemical mechanical polishing

Variation of Surface Layer During Chemical Mechanical Polish

Analysis on Contact and Flow Features in CMP Process

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing

Wear phenomena in chemical mechanical polishing

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

Variations of a Ni-P Surface Layer after Nanoparticle Impacts

Grinding and lapping induced surface integrity of silicon wafers and its effect on chemical mechanical polishing

Research on Surface Topography of Silicon Wafer in Chemical-mechanical Polishing

Progress in Material Removal Mechanisms of Surface Polishing with Ultra Precision

Mechanism and Applications of Chemical and Mechanical Polishing

XPS and AFM study of chemical mechanical polishing of silicon nitride

A chemical mechanical polishing model incorporating both the chemical and mechanical effects

Non-continuum Material Removal Mechanism of Surface Polishing with Ultra Precision

Mechanical Model of Single Abrasive During Chemical Mechanical Polishing: Molecular Dynamics Simulation

Chemical mechanical polishing: Theory and experiment

Effects of the Polishing Variables on the Wafer-Pad Interfacial Fluid Pressure in Chemical Mechanical Polishing of 12-Inch Wafer

A Preliminary Model Accounting for the Suction Pressure in CMP Process