Experimental Research on CTEs of SiO2/PI Nanocomposites at Low Temperature

WANG Zheng-dao,JIANG Shao-qing,LI Yan,FU Shao-yun
DOI: https://doi.org/10.3969/j.issn.1673-0291.2005.01.011
2005-01-01
Abstract:The high coefficient of thermal expansion of PI film is one of the serious disadvantages for its application in the cryogenic as a thermal or electrical insulator. In order to decrease its CTE, nano-SiO2 is used as an additive to synthesize different SiO2 contents SiO2/PI nanocomposite films by sol-gel technique. By use of a self-designed CTE testing device for film materials, the CTEs of SiO2/PI nanocomposite films from room temperature to low temperature (77 K) are measured, and the influence of SiO2-contents and pre-loading on CTEs is discussed.
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