P-type CuAlO2 semiconductor ceramic material prepared by sintering

赵大庆,姚为
DOI: https://doi.org/10.3321/j.issn:1001-3784.2004.06.003
2004-01-01
Abstract:Ceramic target material with good performance is a prerequisite for film preparation by sputtering. Using Al2O3 (nanosize) and Cu2O (micron size) powders as raw material, a P-type transparent conducting oxide ceramic material, CuAlO2, was prepared by sintering in Ar atmosphere. The effect of sintering temperature on the reaction was investigated by means of XRD and SEM. A P-type semiconductor material with good performance was obtained by sintering at appropriate temperature range with mobility being 27 cm2·V-1·s-1. Taking the semiconductor material as a target, a P-type transparent semiconductor film was obtained by vacuum magnetron spuffering with mobility being 2.1 cm2·V-1·s-1.
What problem does this paper attempt to address?