Sintering and dielectric properties of Al 2 O 3 ceramics doped by TiO 2 and CuO

Qi-Long Zhang,Hui Yang,Jia-Li Zou,Hui-ping Sun
DOI: https://doi.org/10.1007/s10832-007-9028-3
2007-01-01
Journal of Electroceramics
Abstract:The effects of CuO and TiO 2 additives on the microstructure and microwave dielectric properties of Al 2 O 3 ceramics were investigated. Al 2 O 3 ceramics with CuO and TiO 2 additions can be well sintered to achieve 93∼98% theoretical densities below 1,360 °C due to Ti 4 Cu 2 O liquid phase sintering effect. The Qf values decreased with increasing CuO and TiO 2 content, due to the formation of the second phase Ti 4 Cu 2 O. However, the varying behaviors of the dielectric constant ( ɛ r ) and temperature coefficients (τ f ) were associated with phase constitutions, as a result of the change of CuO and TiO 2 content. The τ f can be shifted close to 0 ppm/°C by controlling the content of CuO and TiO 2 . The specimens with 0.5 wt.% CuO and 7 wt.% TiO 2 sintered at 1,360 °C for 4 h showed ɛ r of 11.8, Qf value of 30,000 GHz, and τ f of −7 ppm/°C.
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