Fabrication of Thermal Insulation Structure for Uncooled Pyroelectric Thin Film IR Detector

李靓,姚熹,张良莹
DOI: https://doi.org/10.3969/j.issn.1674-4926.2004.07.020
2004-01-01
Abstract:Multilayer film that consists of porous silica layer integrated with silica buffer layer is used as thermal insulating structure for uncooled pyroelectric thin film IR detector. Porous silica film and buffer silica film are prepared by sol-gel method. By optimizing fabricating process, porous silica films with thickness of 3070 nm and porosity of 59% and buffer silica film with thickness of 188 nm and porosity of 4% are successfully achieved by spin coating. AFM experiment results show that the surface roughness of porous silica film decreases after being integrated with buffer silica film. The thermal insulating structure is suitable to integrate other functional films to fabricate the detector.
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