Comparative study of pyroelectric response of PZT-film/Si, PZT-film/Por-Si/Si and PVDF-film/Si structures

S. Bravina,N. Morozovsky,E.A. Eliseev,E. Cattan,D. Remiens,A. Grosman

DOI: https://doi.org/10.48550/arXiv.cond-mat/0406663

2004-06-27

Abstract:The comparative investigation of pyroelectric response modulation frequency dependences of structures of "polar active film-Si substrate" type based on PZT and PVDF and of structures of "polar active film - buffer layer - Si substrate" type based on PZT and porous silicon (por-Si) has been carried out. By photopyroelectric modulation method the thermowave pyroelectric "under-surface" probing was performed and amplitude-to-frequency and phase-to-frequency dependences of pyroelectric response of investigated systems in the voltage and current modes were obtained. By performing the analysis of obtained dependences the thermal diffusivity values of investigated PZT and PVDF films, and also por-Si interlayer were estimated. The results of theoretical consideration of the structures under investigation are in a good agreement with the experimental data. The problem of thermal decoupling and self-decoupling from position of chain "frequency-thickness-material" and question of complete and incomplete thermal linkage are briefly discussed. The obtained results show that a por-Si layer is a suitable material for effective thermal decoupling of polar active film and heat removing Si-substrate which realized in significant increase of pyroelectric response value and approach it to that of characteristic for a free sensitive element.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **To study the pyroelectric response characteristics of ferroelectric thin films (PZT and PVDF) with different structures on Si substrates, especially the influence on the pyroelectric properties when introducing porous silicon (por - Si) as an intermediate layer**.

Specifically, the paper conducts a comparative study on the frequency - dependence of the pyroelectric response of the following structures:
1. **PZT thin film/Si substrate**
2. **PZT thin film/porous silicon (por - Si)/Si substrate**
3. **PVDF thin film/Si substrate**

The researchers carried out experiments using the photothermal modulation method and measured the amplitude - frequency and phase - frequency characteristics of these structures in voltage and current modes. By analyzing these characteristics, they estimated the thermal diffusivity of PZT and PVDF thin films and the porous silicon intermediate layer, and explored the problems of thermal decoupling and self - decoupling, especially the problems of complete and incomplete thermal coupling in the "frequency - thickness - material" chain.

### Main problems
1. **Thermal coupling and decoupling**: How to effectively decouple the heat conduction between the ferroelectric active layer (PZT or PVDF) and the Si substrate by introducing a porous silicon intermediate layer, thereby increasing the pyroelectric response value.
2. **Estimation of thermal diffusivity**: Estimate the thermal diffusivity of PZT, PVDF thin films and the porous silicon intermediate layer through experimental data.
3. **Optimization of pyroelectric response**: Study how to optimize the performance of pyroelectric detectors by selecting appropriate materials and structural designs.

### Experimental methods
- Use the photothermal modulation method for thermal wave detection.
- Measure the changes in the amplitude and phase of the pyroelectric response at different frequencies.
- Analyze the obtained data to determine the thermal diffusivity and other related parameters.

### Theoretical considerations
The paper also explains the pyroelectric response characteristics of different structures through theoretical models and discusses the differences in the behavior of free - sensitive elements (SE), thin - film SEs with substrates, and SEs with intermediate layers at different frequencies.

### Results
- The introduction of a porous silicon intermediate layer significantly increases the pyroelectric response value, making it close to the characteristics of free - sensitive elements.
- As an effective thermal isolation material, porous silicon can significantly reduce the thermal influence of the Si substrate on the ferroelectric active layer, thereby improving the sensitivity of pyroelectric detectors.

Through these studies, the paper provides important theoretical and experimental bases for the development of high - performance pyroelectric detectors.