Abstract:Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) were used to characterize defect states throughout the bandgap of unintentionally-doped InxAl1−xN grown by metal organic chemical vapor deposition for x = 0.18 (nominally lattice-matched) and x = 0.15 compositions. DLTS revealed broad peaks with energy levels of EC − 0.23 eV and 0.38 eV for In0.18Al0.82N and In0.15Al0.85N, respectively, tracking the difference in their conduction band minima [S. Schulz et al., Appl. Phys. Express 6, 121001 (2013)]. Capture kinetics studies revealed logarithmic filling behavior, which with the broad peaks, implies that an extended defect source is likely, consistent with threading dislocation densities (TDD) of ∼1 × 109 cm−2 measured for both structures. However, the trap concentration did not track the detailed TDD variation but instead followed the background oxygen content, which varied between 1.2 × 1018 cm−3 and 1.8 × 1018 cm−3 for the samples. Taken together with the logarithmic capture kinetics, this implies that dislocation-oxygen complexes could be the source for this trap. In spite of the high oxygen content in the samples, this state did not reveal DX-like behavior, supporting the assertion of an oxygen-dislocation complex as its likely source. DLOS also revealed additional states at EC − 1.63 eV, 2.09 eV, and 3.59 eV for In0.18Al0.82N and analogous states at EC − 1.70 eV, 2.70 eV, and 3.90 eV within In0.15Al0.85N. Lighted capacitance-voltage measurements indicated that the near mid-gap (EC − 2.09 eV and 2.70 eV) and near valence band (EC − 3.59 eV and 3.90 eV) states are their primary sources for carrier compensation.

Investigation of Deep Trap Center of AlN Grown on Si Substrate

Study of Interface Trap States of AlN-Si(111) Heterostructure*

Deep Traps in AlN Hydride Vapor Phase Epitaxy film on Low-Temperature AlN/sapphire

Deep Centers in GaN Layers Grown on Epitaxial Lateral Overgrowth Templates by Metalorganic Chemical Vapor Deposition

Characterization of Traps in InAlN by Optically and Thermally Stimulated Deep Level Defect Spectroscopies

Photo-stimulated Current Spectroscopy and Its Application in Detecting Aluminum Implantation-Induced Deep Traps in GaN

Deep Level Investigation of INGAAS on INP Layer

Distribution of Deep-Level Traps at Atomic-Layer-deposited Al2O3/n-GaN Interface

Deep Level Traps in GaN LEDs Grown by Metal Organic Vapour Phase Epitaxy on an 8 Inch Si(111) Substrate

Spatial Identification Of Traps In Algan/Gan Heterostructures By The Combination Of Lateral And Vertical Electrical Stress Measurements

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al 2 O 3 /GaN MOS Device

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Evolution Of Traps In Tin/O-3-Sourced Al2o3/Gan Gate Structures With Thermal Annealing Temperature

Comparative Study of Deep Levels in GaN Grown on Different Templates

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Investigation on the Annealed Behavior of the Deep Level Trap in LEC SI-GaAs

XPS Study of Impurities in Si‐doped AlN Film

Impact of Residual Carbon Impurities and Gallium Vacancies on Trapping Effects in AlGaN/GaN MIS-HEMTs

Deep centers inAlGaAs/GaAs GRIN-SCHSQW laser structures grown by MBE and MOCVD

The Si Nanocrystal Trap Center Studied by Deep Level Transient Spectroscopy (DLTS)

PEALDInvestigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges