Abstract:Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) were used to characterize defect states throughout the bandgap of unintentionally-doped InxAl1−xN grown by metal organic chemical vapor deposition for x = 0.18 (nominally lattice-matched) and x = 0.15 compositions. DLTS revealed broad peaks with energy levels of EC − 0.23 eV and 0.38 eV for In0.18Al0.82N and In0.15Al0.85N, respectively, tracking the difference in their conduction band minima [S. Schulz et al., Appl. Phys. Express 6, 121001 (2013)]. Capture kinetics studies revealed logarithmic filling behavior, which with the broad peaks, implies that an extended defect source is likely, consistent with threading dislocation densities (TDD) of ∼1 × 109 cm−2 measured for both structures. However, the trap concentration did not track the detailed TDD variation but instead followed the background oxygen content, which varied between 1.2 × 1018 cm−3 and 1.8 × 1018 cm−3 for the samples. Taken together with the logarithmic capture kinetics, this implies that dislocation-oxygen complexes could be the source for this trap. In spite of the high oxygen content in the samples, this state did not reveal DX-like behavior, supporting the assertion of an oxygen-dislocation complex as its likely source. DLOS also revealed additional states at EC − 1.63 eV, 2.09 eV, and 3.59 eV for In0.18Al0.82N and analogous states at EC − 1.70 eV, 2.70 eV, and 3.90 eV within In0.15Al0.85N. Lighted capacitance-voltage measurements indicated that the near mid-gap (EC − 2.09 eV and 2.70 eV) and near valence band (EC − 3.59 eV and 3.90 eV) states are their primary sources for carrier compensation.

Deep levels in MOCVD Al0.48In0.52As/InP

Effect of Growth Condition on Electrical-Properties of Mbe and Mocvd-Alinas

Characterization of Traps in InAlN by Optically and Thermally Stimulated Deep Level Defect Spectroscopies

Deep Level Investigation of INGAAS on INP Layer

Effect of thermal cyclic growth on deep levels in AlGaAs/Si heterostructures grown by MOCVD

Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates

The Effect of Growth Temperature on the Electrical-Properties of Alinas/Inp Grown by Molecular-Beam Epitaxy and Metal-Organic Chemical-Vapor-Deposition

Investigation of deep level defects on Beryllium compensation doping of In 0.53 Ga 0.47 As/GaAs 0.49 Sb 0.51 type-II superlattice photodiodes.

Deep centers inAlGaAs/GaAs GRIN-SCHSQW laser structures grown by MBE and MOCVD

Investigation of deep level defects on Beryllium compensation doping of In053Ga047As/GaAs049Sb051 type-II superlattice photodiodes

Deep Levels in High Resistivity Gan Epilayers Grown by Mocvd

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

Evolution of secondary defects in arsenic implanted Si

Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

Deep Level Transient Spectroscopy Characterisation of Defects in AlGaN/Si Dual‐band (UV/IR) Detectors Grown by MBE

Deep Centers Investigations of P-HEMT Functional Materials of Ultra-High-speed Microstructures Grown by MBE

Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Intrinsic point defects investigation in InAlAs with extrapolated defect transition level

Deep Level Centers in Carbon-Doped High Resistivity GaN

Photo-stimulated Current Spectroscopy and Its Application in Detecting Aluminum Implantation-Induced Deep Traps in GaN