Abstract:In this paper, plotoluminescence (PL) measurements were performed on several series of single-side Si doped MBE pseudomorphic high electron mobility transistors (p-HEMTs) quantum well (QW) samples, with different spacer layer widths, well widths and Si delta -doped concentrations, under different temperatures and excitation power densities. pi, signals from the transitions of the second electron subband to the first heavy-hole subband (e2-hh1) and the first electron subband to the fat heavy-hole subband (e1-hh1) have been observed with good symmetry and narrow full width at half maximum (FWHM) indicating high sample quality compared with previous reported results. The dynamic competitive luminescence mechanism between the radiations of e2-hh1 and e1-hh1 was discussed in detail. The confining potential, subband energies, corresponding envelope functions, subband occupations and transferring efficiency have been calculated by self consistent definite differential method at different temperatures in comparison with our experiment results. The relative variation of the integrated luminescence intensity of the two transitions (e1-hh1 and e2-hh1) was found to be dependent on the temperature and the structure's properties, e.g. spacer layer width, dopant concentration and well width, which is an efficient characterization method before p-HEMTs device fabrication.

Characterization of Deep Centers in Algaas/Ingaas/Gaas Pseudomorphic Hemt Structures Grown by Molecular Beam Epitaxy and Hydrogen Treatment

Deep Centers Investigations of P-HEMT Functional Materials of Ultra-High-speed Microstructures Grown by MBE

Characterization of Fluorine‐plasma‐induced Deep Centers in AlGaN/GaN Heterostructure by Persistent Photoconductivity

Effect of thermal cyclic growth on deep levels in AlGaAs/Si heterostructures grown by MOCVD

Deep centers inAlGaAs/GaAs GRIN-SCHSQW laser structures grown by MBE and MOCVD

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Optical Investigations On Pseudomorphic: Delta-Doped Algaas/Ingaas/Gaas Quantum Wells

Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure

Deep Level Centers in Carbon-Doped High Resistivity GaN

Photoluminescence of Algaas/Ingaas/Gaas Pseudomorphic Hemts with Different Thickness of Spacer Layer

The observation of Gaussian distribution and origination identification of deep defects in AlGaN/GaN MIS-HEMT

Self-assembled monolayer gate doping and their detail deep cryogenic characterization of GaN/Si HEMTs

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

Deep levels in MOCVD Al0.48In0.52As/InP

Algan/Gan Hemts with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization

Effect of Hydrogen Poisoning on P-Gate AlGaN/GaN HEMTs

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices

Growth and Characterization of Algan/Gan Superlattices

Static Characteristics of AlGaN/GaN High Electron Mobility Transistors with Different Thickness of AlGaN Layer

O2 Plasma Alternately Treated ALD-Al2O3 As Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs