Theoretical Research on Piezoresistive Coefficients of Polysilicon Films

刘晓为,霍明学,陈伟平,王东红,张颖
DOI: https://doi.org/10.3969/j.issn.1674-4926.2004.03.011
2004-01-01
Abstract:The piezoresistive coefficients of polysilicon films in monosilicon grains and grain boundaries are theoretically investigated by using stress decouple model. The expressions for the piezoresistive coefficients of polysilicon films are obtained. A comparison between the experimental and theoretical results is performed, and a better uniformity is achieved. The presented theory is helpful to theoretical analysis of the piezoresistive properties of polysilicon.
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