Abstract:The continuous development and application of laser technology, and the increasing energy and power of laser output have promoted the development of various types of laser optical systems. The optical components based on quartz materials are key components of high-power laser systems, and their quality directly affects the load capacity of the system. Due to the photothermal effect when the laser interacts with the quartz material and generates extremely high temperatures in a short period of time, it is impossible to experimentally solve the phenomena and physical mechanisms under extreme conditions. Therefore, it is very important to select a suitable method to investigate the thermal effect of intense laser interaction with quartz materials and explain the related physical mechanism. In this study, a three-dimensional quarter-symmetric laser heating quartz material geometry model by using nonlinear transient finite element method was established, and its transient temperature field distribution of the quartz material after being heated by a 1,064 nm continuous laser was investigated. In addition, the influence of different laser parameters (laser spot radius, heat flux and irradiation time), material parameters (material thickness, material absorption rate of laser) on the thermal effect of heating quartz material were also studied. When the laser heat flux is 20 W/cm2, the diameter of the laser spot is 10 cm, the irradiation time is 600 s and the thickness is 4 cm, the temperature after laser heating can reach 940.18°C, which is far lower than the melting point. In addition, the temperature maximum probes were set at the overall model, spot edge and rear surface respectively, and their temperature rise curves with time were obtained. It is also found that there is a significant hysteresis period for the rear surface temperature change of the quartz material compared with the overall temperature change due to heat conduction. Finally, the method proposed can also be applied to the laser heating of other non-transparent materials.

The Elimination of Thermal Runaway in 10.6 μm Laser-Induced Diffusion

Temperature Rise on a Semiconductor Substrate Locally Heated by 10.6 μm Laser Beam

Selected Two-Dimensional Effects in Gas Immersion Laser Doping of Unpatterned Silicon

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Molecular Dynamics Simulation Of Ultra-Fast Thermal Transition In Thin Foil Irradiated By High Power Ultra-Short Laser

Molecular Dynamic Simulation of Non-Melt Laser Annealing Process

Simulation study on the thermal effect of continuous laser heating quartz materials

Temperature Rise of InP Heated by CW CO2 Laser Locally

Flatting of Temperature Distribution in Laser Induced Diffusion Region

Laser-Induced Damage Threshold of Silicon under Combined Millisecond and Nanosecond Laser Irradiation

Behavior Analysis and Threshold Prediction of Laser-Induced Damage in Fused Silica Based on 2-D Thermal Diffusion Model

Using a laser to cool a semiconductor

Thermal Reaction of High Power Semiconductor Laser with Voids in Solder Layer

The Photo-Thermal Absorbing Influence on Introducing Laser-Damaging of the Fused Silica

Energy Transfer Between Femtosecond Laser and Silicon Carbide

Theory Analysis of Wavelength Dependence of Laser-Induced Phase Explosion of Silicon

Analysis of Threshold Characteristics of Short-wavelength Semiconductor Lasers

Toward Little Heat-Affected Area of Fused Silica Materials Using Short Pulse and High Power CO2 Laser

Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

Calculation of the temperature distribution inside semiconductor films irradiated by a pulsed laser

Calculation of Laser Irradiation Effect and Analysis of Laser-Induced Damage Threshold in Semiconductor