Abstract:Local temperature non-uniformity is a critical limit to power in large-area semiconductor lasers, playing a larger role than the conversion efficiency and temperature sensitivity in the most efficient modern devices. For the specific case of kilowatt-level edge-emitting diode laser bars, we demonstrate that laterally re-distributing current locally within each emitter using a customized micro-structuring of the electrical contact can flatten the thermal profile, based on the thermal design using COMSOL. The concept is demonstrated experimentally in adapted bars that contain eight broad-area emitters, each having wide (∼1100 μm) stripes and a 4 mm long resonator. Each emitter in the laser bar has an electrical contact layer that is electrically structured into parallel sub-contacts using implantation, essential to prevent lateral lasing, implemented here with a period of 29 μm. The width of the individual sub-contacts is narrowed in the device center and then monotonically increased toward the emitter edges to collect a higher proportion of heat at the edges, for a fivefold reduction in the thermal lens, despite a significant (20%) overall increase in electrical and thermal resistance. Two performance benefits are observed. First, the slope varies more slowly with average temperature, recovering (here) around half of the efficiency penalty from in-stripe temperature non-uniformity, and hence increasing the power conversion efficiency at 800 W optical output power by around 5%. Second, the lateral far field (95% power content) is narrowed by around 2° at 800 W optical output power, corresponding to a reduction of around half of the thermal contribution.

Flatting of Temperature Distribution in Laser Induced Diffusion Region

Temperature Uniformity of the Laser Exposed Area

Integration Effects of Twice Irradiations on Homogenizing Distribution of One-Dimentional Impurity Concentration

Temperature Rise on a Semiconductor Substrate Locally Heated by 10.6 μm Laser Beam

The Elimination of Thermal Runaway in 10.6 μm Laser-Induced Diffusion

Focusing in Radiometric Temperature Measurement for Small Laser-Processed Region

Remote temperature measurement of the exposed region in pulse laser assisted microprocessing

Temperature distribution induced spectral broadening of high-power diode lasers

Improved Method of Excitation Signal in Transient Temperature Calibration System Based on Laser

Improvement on the Radiometric Temperature Measurement in Small Laser-Processing Region

[Temperature Distribution Based on Monte Carlo Method of Optical Transmission in Tissues of Laser Ablation].

Study on 532-Nm Flattened Laser Beam for Silicon Wafer Grooving

Improving the opto-thermal performance of transmissive laser-based white light sources through beam shaping

Micro-structured lateral thermal lens for increased output power and narrowed beam divergence in kilowatt-class 9xx nm diode laser bars

Computer-Controlled Temperature Measurement System for the Small Exposed Region in Laser Assisted Microprocessing

A semi-analytical solution of 3-D transient temperature field for a uniform plate subjected to Gaussian-distribution laser heat source

Transient emission wavelength estimation for DFB laser with temperature tuning

Thermal Performance of Laser Diode Array under Constant Convective Heat Transfer Boundary Condition

Intensity distribution optimal design for laser-dominated thermal loading

Temperature Change Effect of a Laser Field Undergoing the Diffusion Channel

Measurement of temperature-dependent diffusion coefficients using a confocal Raman microscope with microfluidic chips considering laser-induced heating effect.