Abstract:In this work, high concentration erbium doping in silicon-rich SiO2 thin films is demonstrated. Si plus Er dual-implanted thermal SiO2 thin films on Si substrates have been fabricated by using a new method, the metal vapor vacuum arc ion source implantation with relatively low ion energy, strong flux and very high dose. X-Ray photoelectron spectroscopy measurement shows that very high Er concentrations on the surfaces of the samples, corresponding to ∼10 at.% or the doping level of ∼1021 atoms cm−3, are achieved. This value is much higher than that obtained by using other fabrication methods such as the high-energy ion implantation and molecular beam epitaxy. Reflective high-energy electron diffraction, atomic force microscopy and cross-section high-resolution transmission electron microscopy observations show that the excess Si atoms in SiO2 matrix accumulate to form Si clusters and then crystallize gradually into Si nanoparticles embedded in SiO2 films during dual-ion implantation followed by rapid thermal annealing. Er segregation and precipitates are not formed. Photoluminescence at the wavelength of 1.54 μm exhibits very weak temperature dependence due to the introduction of Si nanocrystals into the SiO2 matrix. The 1.54-μm light emission signals from annealed samples decrease by less than a factor of 2 when the measuring temperature increases from 77 K to room temperature.

Effects of Si and Er concentration on 1.54 μm photoluminescence from silica-based thin films

EFFECTS OF Si AND Er CONCENTRATION ON 1.54 Μm PHOTOLUMINESCENCE FROM SILICA-BASED THIN FILMS

Optimum Silicon Ion Dose for 1540 Nm Photoluminescence from Erbium-Doped Silica Thin Films Formed by MEVVA Implantation

An upper limit of concentration for erbium photoluminescence from silica-based thin films formed by MEVVA implantation

Energy transfer in Er doped silica films containing Si nanocrystals formed by MEVVA ion implantation

Erbium-doped optical waveguide materials based on Si nanocrystals formed by metal vapour vacuum arc ion implantation

Different Effect of Nanocrystals on the Electroluminescence and Photoluminescence in Er-doped SiO2 Films

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

[Photoluminescence from Si and Er Dual-Implanted Si-rich Thermal Oxidation SiO2/Si Thin Films].

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

A Novel Method to Achieve 1.54 Μm Light Emission from Silica Thin Films

An Effect of Si Nanoparticles on Enhancing Er3+ Electroluminescence in Si-rich SiO2:Er Films

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Photoluminescence of Er-doped SiO2 layers containing Si nanoclusters using dual ion implantation and annealing

A Novel Approach of Photoluminescence from Erbium-Doped Silicon-Based Materials

A COMPARISON BETWEEN 1.5µm PHOTOLUMINESCENCE FROM Er-DOPED Si-RICH SiO2 FILMS AND (er,ge) CO-DOPED SiO2 FILMS

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Formation and Photoluminescence Characteristics of Er-related Nanostructures on Si(001) Substrate Covered with an Ultrathin SiO2 Film

High concentration erbium doping of silicon-rich SiO2 thin films on silicon