Optimum Silicon Ion Dose for 1540 Nm Photoluminescence from Erbium-Doped Silica Thin Films Formed by MEVVA Implantation

ZS Xiao,F Xu,GA Cheng,TH Zhang,SP Wong

DOI: https://doi.org/10.1016/s0375-9601(02)01364-6

IF: 2.707

2002-01-01

Physics Letters A

Abstract:In this work, SiO2 thin films containing Er and Si nanocrystals were prepared by implantation with a metal vapor vacuum arc (MEVVA) ion source. Photoluminescence (PL) properties of the films at 77 K and at room temperature (RT) were studied as functions of the Si ion dose. The PL intensities were strongly enhanced by the incorporation of nanocrystalline Si (nc-Si) in the SiO2 films. The intensity of the 1.54 μm luminescence peak first increased with increasing Si dose, arriving at a maximum at a Si dose of 5×1017 cm−2, then decreased with further increase in Si dose. These results are discussed and understood in terms of the role of nc-Si in Er luminescence mechanisms in silica containing nc-Si.