Numerical Algorithm of Scatter Parameters of Microwave Transistor

QI Chen-jie,Wu Guo-hua,WANG Xiao-hui,LI Guo-hui,HUANG Chang
DOI: https://doi.org/10.3969/j.issn.1674-4926.2001.04.015
2001-01-01
Chinese Journal of Semiconductors
Abstract:The maturation of low-cost silicon-on-insulation (SOI) MOSFET technology in the microwave domain has brought about a need to develop the specific characterization.The paper presents a method of abstaining from the scatter parameters of SOI MOSFET by resolving the Poisson equation,current equations and the telegraph equations of transmission lines of the input/output match networks.A numerical algorithm is used for the equation resolution.The input/output match circuits of MMIC can be designed and fabricated together with its active transistor,so that it shotens the fabrication period compared with the method of parameter abstraction when MMIC being developed.The numerical algorithm on the SOI MOSFET's scatter parameters has been carried out.It shows that the result from this method is identical with that from the parameter abstraction.
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