Noise modeling for RF CMOS circuit simulation
Andries J. Scholten,Luuk F. Tiemeijer,Ronald van Langevelde,Ramon J. Havens,Adrie T. A. Zegers-van Duijnhoven,Vincent C. Venezia,A.J. Scholten,L.F. Tiemeijer,R. van Langevelde,R.J. Havens,A.T.A. Zegers-van Duijnhoven,V.C. Venezia
DOI: https://doi.org/10.1109/ted.2003.810480
IF: 3.1
2003-03-01
IEEE Transactions on Electron Devices
Abstract:The RF noise in 0.18-$\mu$ m CMOS technology has been measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the drain current noise for short-channel MOSFETs. The gate current noise on the other hand is more significantly enhanced, which is explained by the effects of the gate resistance. The experimental results are modeled with a nonquasi-static RF model, based on channel segmentation, which is capable of predicting both drain and gate current noise accurately. Experimental evidence is shown for two additional noise mechanisms: 1) avalanche noise associated with the avalanche current from drain to bulk and 2) shot noise in the direct-tunneling gate leakage current. Additionally, we show low-frequency noise measurements, which strongly point toward an explanation of the $1/f$ noise based on carrier trapping, not only in n-channel MOSFETs, but also in p-channel MOSFETs.
engineering, electrical & electronic,physics, applied