Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence

M.W. Pospieszalski

DOI: https://doi.org/10.1109/22.32217

IF: 4.3

1989-01-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:A simple noise model of a microwave MESFET (MODFET, HEMT, etc.) is described and verified at room and cryogenic temperatures. Closed-form expressions for the minimum noise temperature, the optimum generator impedance, the noise conductance, and the generator-impedance-minimizing noise measure are given in terms of the frequency, the elements of a FET equivalent circuit, and the equivalent temperatures of intrinsic gate resistance and drain conductance to be determined from noise measurements. These equivalent temperatures are demonstrated in the case of a Fujitsu FHR01FH MODFET to be independent of frequency in the frequency range in which 1/f noise is negligible. Thus, the model allows prediction of noise parameters for a broad frequency range from a single frequency noise parameter measurement. The relationships between this approach and other relevant studies are established.<>

engineering, electrical & electronic