Abstract:Hydrogenated amorphous Si thin films were prepared by plasma-enhanced chemical vapor deposition. As-deposited samples were annealed at different temperatures to obtain nano-crystalline Si. During the transition process from amorphous to nano-crystalline structure, Raman scattering spectroscopy was used to characterize the changes of microstructures. The temperature-dependent conductivity was measured in order to understand the electric transport processes in the films. It was found that the crystallization occurs at around 700 °C. The crystal volume fraction （ X c ） increases with the increase of annealing temperature, and in the case of the Si film annealed at 1000 ℃, the X c is beyond 90%. The carrier transport characteristics in the films annealed at the different temperatures are different from the as-deposited film. For the sample annealed at 700 ℃, the carrier transport is strongly influenced by the defect states resulting from the effusion of hydrogen, and it is controlled by the hopping conduction of the localized states in the difference measurement temperature regions causing the dual activation energies. For the highly crystallized Si film annealed at 1000 °C, the transport process is strongly influenced by the transport of the extended states in the crystalline silicon, while in the high temperature region, the quantum tunneling process plays an important role in the carrier transport property.

The Transport Mechanism in Nanocrystalline Silicon Films at Low Temperature

Low temperature conduction behavior in highly crystallized undoped microcrystalline silicon thin films

Thermal Transport Mechanism of Amorphous HfO 2 : A Molecular Dynamics Based Study

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Properties of Electric Transport in Crystallized Silicon Films under Different Annealing Temperatures

Low-Temperature Study of Array of Dopant Atoms on Transport Behaviors in Silicon Junctionless Nanowire Transistor

The Change Of Electronic Transport Behaviors By P And B Doping In Nano-Crystalline Silicon Films With Very High Conductivities

A Conduction Model for Polysilicon Thin Films over a Wide Doping Level Range

Low-Temperature Electron Transport in [110] and [100] Silicon Nanowires: A DFT - Monte Carlo study

Electron localization and resonant tunneling in uniform nanocrystalline silicon quantum dot systems

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers

Mechanistic Transition from Phonon Propagation to Thermal Hopping in Two-Dimensional Solids

AC electrical properties of nanocrystalline silicon thin films

Transport Mechanism of Nanocrystalline-Silicon Film Tunnelling Diodes

Conduction Mechanism of Amorphous Hydrogenated Silicon Nitride Films

Electronic States in Hydrogenated Nanocrystalline Silicon Thin Films Detected by Photocurrent Technique

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Electron Dephasing in Nanocrystalline Silicon Thin Films

Temperature-dependent carrier transport behaviors in phosphorus-doped silicon nanocrystals/silicon carbide multilayers

Mechanistic Transition of Heat Conduction in Two-Dimensional Solids: A Study of Silica Bilayers

Hopping Conduction in Partially Compensated Doped Silicon.