Abstract:In this paper, both electric field and magnetic field were used to assist the hot filament chemical vapor deposition (HFCVD) and we systematically investigated the effects of which on the (1) phase composition, (2) grain size, (3) thickness and (4) preferred orientation of diamond films through SEM, Raman and XRD. The application of magnetic field in electric field, so called 'the magnetic and electric coupling fields', enhanced the graphitization and refinement of diamond crystals, slowed down the decrease of film thickness along with the increase of bias current, and suppressed diamond (100) orientation. During the deposition process, the electric field provided additional energy to HFCVD system and generated large number of energetic particles which might annihilate at the substrate and lose kinetic energy, while the Lorentz force, provided by magnetic field, could constrict charged particles (including electrons) to do spiral movement, which prolonged their moving path and life, thus the system energy increased. With the graphitization of diamond films intensified, the preferred orientation of diamond films completely evolved from (110) to (100), until the orientation and diamond phase disappeared, which can be attributed to (I) the distribution and concentration ratio of carbon precursors (C2H2 and CH3) and (II) graphitization sequence of diamond crystal facets. Since the electron field emission property of carbon film is sensitive to the phase composition, thickness and preferred orientation, nano- carbon cones, prepared by the negative bias current of 20 mA and magnetic field strength of 80 Gauss, exhibited the lowest turn-on field of 6.1 V −1 μm−1.

In Situ Optical Emission Spectroscopy Of The Diamond Film Growth Process In Transverse Bias

Experimental Approach to the Mechanism of the Negative Bias Enhanced Nucleation of Diamond on Si Via Hot Filament Chemical Vapor Deposition

The Effect of DC Voltage during Bias-Enhanced Nucleation Treatment on Diamond Film Growth

Mechanism of Diamond Nucleation Enhancement by Filament Carburization in HFCVD Process

Study on the growth of CVD diamond thin films by in situ reflectivity measurement

Influence of Dc Bias Voltage on the Refractive-Index and Stress of Carbon-Diamond Films Deposited from A Ch4/Ar Rf Plasma

Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

Observation of a Non Fowler–Nordheim Field-Induced Electron Emission Phenomenon from Chemical Vapor Deposited Diamond Films

Effect of magnetic and electric coupling fields on micro- and nano- structure of carbon films in the CVD diamond process and their electron field emission property

Bias process for heteroepitaxial diamond nucleation on Ir substrates

Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy

Competition between diamond nucleation and growth under bias voltage by microwave plasma chemical vapor deposition

Periodic Vapor-Phase Fluctuation Influence on Growth of Diamond Films

Ion beam nucleation of diamond

Single-crystal diamond growth by hot-filament CVD: a recent advances for doping, growth rate and defect controls

Monitoring of the Initial Stages of Diamond Growth on Aluminum Nitride Using In Situ Spectroscopic Ellipsometry

Electron-Emission-Enhanced Diamond Nucleation on Si by Hot Filament Chemical Vapor Deposition

Investigation of Diamond Nucleation under Very Low Pressure in Chemical Vapor Deposition

High Efficiency of Boron Doping and Fast Growth Realized with a Novel Gas Inlet Structure in Diamond Microwave Plasma Chemical Vapor Deposition System

Synthesis of Oriented Textured Diamond Films on Silicon Via Hot Filament Chemical Vapor Deposition

Optical Properties of Amorphous Diamond Films Evaluated by Non-Destructive Spectroscopic Ellipsometry