Thermal Stress Relaxation by A Composition-Graded Intermediate Layer

QR Hou,J Gao
DOI: https://doi.org/10.1142/s0217984900000860
2000-01-01
Modern Physics Letters B
Abstract:A simple model has been proposed to calculate the thermal stress distribution for diamond-like carbon films deposited on silicon substrates with a composition-graded intermediate layer. In this model, the intermediate layer is divided into many thin layers, and the thermal stress in one thin layer is caused by the difference in thermal expansion coefficients between this layer and the adjacent layer. It is found that the thermal stress distribution in the intermediate layer is strongly dependent on the composition profile of the intermediate layer. By choosing a proper composition profile, the thermal stress near the interlayer/substrate interface will be very small and this small stress is beneficial to enhancing adhesion of the film. For diamond-like carbon films deposited on silicon substrates, the experimental results are in agreement with the theoretical prediction qualitatively.
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