Abstract:This study utilized ion implantation to modify the material properties of silicon carbide (SiC) to mitigate subsurface damage during SiC machining. The paper analyzed the mechanism of hydrogen ion implantation on the machining performance of SiC at the atomic scale. A molecular dynamics model of nanoscale cutting of an ion-implanted SiC workpiece using a non-rigid regular tetrakaidecahedral diamond abrasive grain was established. The study investigated the effects of ion implantation on crystal structure phase transformation, dislocation nucleation, and defect structure evolution. Results showed ion implantation modification decreased the extension depth of amorphous structures in the subsurface layer, thereby enhancing the surface and subsurface integrity of the SiC workpiece. Additionally, dislocation extension length and volume within the lattice structure were lower in the ion-implanted workpiece compared to non-implanted ones. Phase transformation, compressive pressure, and cutting stress of the lattice in the shear region per unit volume were lower in the ion-implanted workpiece than the non-implanted one. Taking the diamond abrasive grain as the research subject, the mechanism of grain wear under ion implantation was explored. Grain expansion, compression, and atomic volumetric strain wear rate were higher in the non-implanted workpiece versus implanted ones. Under shear extrusion of the SiC workpiece, dangling bonds of atoms in the diamond grain were unstable, resulting in graphitization of the diamond structure at elevated temperatures. This study established a solid theoretical and practical foundation for realizing non-destructive machining at the atomic scale, encompassing both theoretical principles and practical applications.

Study of the Stress Observed in Diamond Films on Carbon-Implanted Alumina Surfaces

Residual Stresses And Debonding Of Diamond Films On Titanium Alloy Substrates

Effects of Applying Stress on the Electron Field Emission Properties in Amorphous Carbon Thin Films

Effect of Pre-Co-Deposition C+ Implantation on the Stress Level of Cosi2 Films Formed on Si(100) Substrates

Unusual Stress Behaviour of CeO2-doped Diamond-Like Carbon Nanofilms

Impact of temperature on residual stress and bonding in diamond-like carbon film: A molecular dynamics study under various deposition conditions

Comparing Internal Stress in Diamond-Like Carbon Films with Different Structure

Modifying Residual Stress and Stress Gradient in LPCVD SI3N 4 Film with Ion Implantation

Micro-hardness and adhesion of diamond-like carbon films

Reduction of the Tensile Stress in CoSi2 Films by Pre-Deposition Carbon Ion Implantation

Thermal Stress Relaxation by A Composition-Graded Intermediate Layer

Influence of Dc Bias Voltage on the Refractive-Index and Stress of Carbon-Diamond Films Deposited from A Ch4/Ar Rf Plasma

Tribological Properties Of Diamond-Like Carbon-Films Deposited On Silicon Using Rf Plasma-Enhanced Cvd

Interface design to tune stress distribution for high performance diamond/silicon carbide coated cemented carbide tools

Enhanced adhesion of diamond-like carbon films with a composition-graded intermediate layer

Effect of Pre-Co-deposition Ni Ion Implantation on the Stress Level of CoSi2 Films on Si(100)

Finite element simulation and experimental investigation of crystallographic orientation-dependent residual stress in diamond cutting of polycrystalline aluminum

Nano-cutting mechanism of ion implantation-modified SiC: reducing subsurface damage expansion and abrasive wear

Microscopic residual stress evolution at the SiC/Al interface during nanoindentation via molecular dynamics simulation

The Growth And Interface Characteristics Of Diamond Films On Cemented Carbide Substrates

Tribological Properties of Graded Diamond-Like Carbon Films on Ti Ion-Implanted Aluminum Substrate