Abstract:Single-crystal silicon has been widely applied in the semiconductor industry due to its excellent properties. However, the material is highly susceptible to surface damage during processing because of its high hardness and brittleness, thus restraining manufacturing quality and practical applications. Although methods like ion implantation have been proposed to reduce hardness and improve machinability, the efficiency is relatively low, and cannot achieve real-time adjustment of material properties during machining. In this paper, we propose a high-efficient and environmentally-friendly method to adjust mechanical properties and improve machinability of the single-crystal silicon by atmospheric-pressure cold plasma. According to nanoindentation and single-point diamond scratching experiments, the cold plasma can effectively reduce microhardness and promote deformation of single-crystal silicon. We then investigate the influence mechanism by surface characterizations using transmission electron microscope, X-ray photoelectron spectrometer, and Raman spectrometer, and discover that the cold plasma forms an amorphous silicon oxides layer on the single-crystal silicon surface. Finally, we perform micro-milling experiments with real-time plasma treatment on the single-crystal silicon surfaces to study the effect of the cold plasma on material machinability. The results demonstrate that the cold plasma can significantly improve surface quality, alleviate chip adhesion and prolong tool life. The proposed real-time cold plasma treatment method may have promising application prospects in precision manufacturing of the single-crystal silicon.

Large-Area Surface Treatment of Monocrystalline Silicon by ECR Plasmas at Low Temperature

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Low-Temperature Floating Plasma Oxidation of Poly-SiGe

Controlling the Low-temperature Ionic Purification of a Silicon Surface by Electron Spectroscopy

A New Method Used to Control the Structure of High Rate Microcrystalline Silicon Thin Films

Effectiveness of plasma diagnostic in ultra high frequency and radio frequency hybrid plasmas for synthesis of silicon nitride film at low temperature

Formation Mechanisms of Silicon Surface Structuring using Single-Multiple Nanosecond Laser Pulses in Ambient Air and Cold Plasma

Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing

Improving machinability of single-crystal silicon by cold plasma jet

Impact of Post-deposition Plasma Treatment on Surface Passivation Quality of Silicon Nitride Films

Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters

Efficient Preparation of Si3N4 by Microwave Treatment of Solar-Grade Waste Silicon Powder

Formation of monocrystalline silicon nanowires using low-energy ion irradiation

300mm Cold-Wall UHV/CVD Reactor for Low-Temperature Epitaxial (100) Silicon

Plasma assisted remediation of SiC surfaces

Modification of plasma-generated SiC nanoparticles by heat treatment under air atmosphere

Investigation of mechanism and surface morphology on the femtosecond laser ablation of silicon nitride under different auxiliary processing environments