Abstract:Ion-flow-stimulated roughening transition is a phenomenon that may prove useful in the hierarchical structuring of nanostructures. In this work, we have investigated theoretically and experimentally the surface texturing of single-crystal and multi-crystalline silicon wafers irradiated using ion-beam flows. In contrast to previous studies, ions had relatively low energies, whereas flow densities were high enough to induce a quasi-liquid state in the upper silicon layers. The resulting surface modifications reduced the wafer light reflectance to values characteristic of black silicon, widely used in solar energetics. Features of nanostructures on different faces of silicon single crystals were studied numerically based on the mesoscopic Monte Carlo model. We established that the formation of nano-pyramids, ridges, and twisting dune-like structures is due to the stimulated roughening transition effect. The aforementioned variety of modified surface morphologies arises due to the fact that the effects of stimulated surface diffusion of atoms and re-deposition of free atoms on the wafer surface from the near-surface region are manifested to different degrees on different Si faces. It is these two factors that determine the selection of the allowable "trajectories" (evolution paths) of the thermodynamic system along which its Helmholtz free energy, F, decreases, concomitant with an increase in the surface area of the wafer and the corresponding changes in its internal energy, U (dU>0), and entropy, S (dS>0), so that dF=dU - TdS<0, where T is the absolute temperature. The basic theoretical concepts developed were confirmed in experimental studies, the results of which showed that our method could produce, abundantly, black silicon wafers in an environmentally friendly manner compared to traditional chemical etching.

Formation of monocrystalline silicon nanowires using low-energy ion irradiation

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

One-dimensional Silicon Nanostructures Fabricated by Thermal Evaporation

Fabrication of Silicon Nano-Wire by Oxidation

Silicon nano-wires grown at low temperature

Study on Thermal Oxidation of Si Nanowires

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Crystalline boron oxide nanowires on silicon substrate

Study Of Dry Oxidation Of Triangle-Shaped Silicon Nanostructure

Top-down fabrication of sub-30 nm monocrystalline silicon nanowires using conventional microfabrication

Tiny SiO2 nano-wires synthesized on Si (111) wafer

Si3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation

Fabrication of Vertically Stacked Single-Crystalline Si Nanowires Using Self-Limiting Oxidation

Molecular Dynamics Simulations of Silicon Carbide Nanowires under Single-Ion Irradiation

Formation of Silicon Oxide Nanowires in Nanomaterial Synthesis Experiments Based on the Usage of Tube Furnace

Surface deep profile synchrotron studies of mechanically modified top-down silicon nanowires array using ultrasoft X-ray absorption near edge structure spectroscopy

Controlled fabrication of Si nanocrystals embedded in thin SiON layers by PPECVD followed by oxidizing annealing

Atomically Smooth P-Doped Silicon Nanowires Catalyzed by Aluminum at Low Temperature

Hierarchical Structuring of Black Silicon Wafers by Ion-Flow-Stimulated Roughening Transition: Fundamentals and Applications for Photovoltaics