The Analysis of Specialities of GexC1-x Films Prepared by RF Magnetron Reactive Sputtering

SONG Jian-quan,LIU Zheng-tang,YU Zhong-qi,GENG Dong-sheng,ZHENG Xiu-lin
DOI: https://doi.org/10.3969/j.issn.1001-4381.2000.10.004
2000-01-01
Abstract:A germanium carbide (Gex,C1-x) film was prepared by RF magnetron reactive sputtering at various mass flow ratios of methane to argon and methane [CH4/ (CH4+Ar)] from a germanium target. The film thickness was measured by optical interferometer and its deposition rate was calculated according to thickness. The results show that not only the deposition rate is not decreased greatly after the target poisoned, but also the germanium atom ratio in GexC1-x, film can be varied in great range. All these are different from the common magnetron reactive sputtering. The reason why the GexC1-x film has these specialties is the behavior of reactive gas (CH4) particles after the target poisoned. This conclusion is universal to deposit carbide by magnetron reactive sputtering.
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