Abstract:Abstract This paper presents design, fabrication and characterization details of a 10kV power module package for >200°C ambient temperature applications. Electrical simulations were performed to confirm the module design, and that the electric field distribution throughout the module did not exceed dielectric capabilities of components and materials. A suitable copper etching process was demonstrated for DBC layout, and a high melting point Sn/Pb/Ag solder reflow process was developed for device and component attachment. To monitor the operational temperature of the module, a thermistor was integrated onto the substrate. A new silicone gel, having a working temperature up to 210°C, was evaluated and selected for encapsulation and, of great importance, for passivation of high voltage (10kV) SiC dies. An additive manufacturing ‘Design Process’ was developed and applied to printing the housings, molds, and test fixtures. Also, cleaning processes were evaluated for every step in the fabrication process. To verify performance of the modules, mechanical dies were mounted on the substrates, and a high temperature testing setup built to characterize the modules at high temperature. Measurements indicated that the module can operate up to 12kV within 25°C to 225°C, with less than 0.1 μA leakage current. The packaging was used for full-power characterization of developmental 10kV SiC diodes, and proved that the power module packaging satisfied all requirements for high voltage and high temperature applications. This work successfully validated the processes for creating high voltage (>10 kV) and high temperature (>200°C) power modules.

Manufacture of axially insulated large-area diodes

Experimental investigation on a large area diode for a hundred-Joule KrF laser

Formation of directed wide-aperture flows of runaway electrons in air-filled magnetized diodes

5 A/1.17 Kv NiO/$\beta$-Ga2O3 Heterojunction Power Rectifier with High-Temperature Operation Capability Up to 548 K

Two-side electron-beam pumping system for KrF excimer laser of hundred-Joule level

0.58 Mω;cm2/523 V GaN Vertical Schottky Barrier Diode with 15.6 Ka/cm2; Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

Using 12 MeV electron beams to develop silicon P+NN+ high frequency rectifying diodes

Design and development of 1.5 kV vertical GaN pn diodes on HVPE substrate

A High Performance Power Module with >10kV capability to Characterize and Test In Situ SiC Devices at >200°C Ambient

Development and Insulation Performance Evaluation of Experimental Sample for a Direct Current High-Voltage Transmission Line

Preliminary study of dual annular multiple-beam cathode for V-band coaxial transit-time oscillator

0.58 mΩ·cm<sup>2</sup>/523 V GaN Vertical Schottky Barrier Diode with 15.6 kA/cm<sup>2</sup> Surge Current Enabled by Laser Lift-Off/Annealing and N-Ion Implantation

Spoke-Type Structures in an Ion Diode with Magnetic Insulation of Electrons

Simulation, Fabrication and Characterization of 4500v 4H-Sic Jbs Diode

High Q and high gradient performance of the first medium-temperature baking 1.3 GHz cryomodule

High-Voltage Large-Current 4H-SiC JBS Diodes

1.95-Kv Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode with 98.5% Conversion Efficiency and over Million-Times Overvoltage Ruggedness

Design and Characterization of A High-Power Induction Module at Megahertz Repetition Rate Burst Mode

High Field Experiment of 1.3 M-Long X-band Structure

High Power Figure-of-Merit, 10.6-Kv AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-m Anode-to-Cathode Spacing

Arrays of Vacuum Microdiodes Using Uniform Diamondlike-Carbon Tip Apexes