Ionized cluster beam deposited C60 films and their doping

Fu U. Dejun,Lei Yuanyuan,Li Jinchai,Ye Mingsheng,Peng Yougui,Fan Xiangjun
1998-01-01
Abstract:We report polycrystalline semiconducting C60 films prepared by ionized cluster beam deposition and ion implantation of the films using dopants as well as inert elements. The films showed room-temperature resistivity over 104 Ω·cm and sharp decreases of the resistance upon ion implantation. Amorphization was observed for all implanted films, which was attributed to the disintegration of the C60 molecules as a result of the ion-C60 interaction. We observed n-type electrical conduction for phosphorus-implanted C60 films.
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