Abstract:The thermal-noise temperature for hot electrons in steady-state transport in the presence of a strong dc electric field is examined with use of a nonlinear-balance-equation theory with a finite phonon relaxation time. In defining the noise temperature in terms of the maximum available noise power, we find that it is necessary to distinguish between the ``noise'' conductivity and the signal conductivity for nonzero dc bias. Particular attention is focused on single-layer and multilayer GaAs heterosystems. The longitudinal and transverse noise temperatures are calculated as functions of frequency at different dc bias points taking into account the impurity, acoustic-phonon, and polar optic-phonon scatterings, as well as the Coulomb interaction between carriers in the random-phase approximation. For three high-mobility (1\ifmmode\times\else\texttimes\fi{}${10}^{6}$ ${\mathrm{cm}}^{2}$/V s) GaAs heterosystems, both longitudinal and transverse noise temperatures are shown to be lower than the lattice temperature T (77 K) for wide ranges of dc electric field and frequency in the case of zero phonon relaxation time. However, the nonequilibrium population of the polar optic phonon generally suppresses the effect of electron cooling.

Thermal-Noise Temperature in GaAs-AlGaAs Heterojunctions

Thermal-noise Temperature of GaAs Heterosystems for Steady-State Hot-Electron Transport with Nonequilibrium Phonons

Effect of Intersubband Coulomb Interaction on Hot-Electron Transport in Two- and One-Dimensional Electron Systems

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Magneto-hot-electron Transport for GaAs-Ga1−xAl

Subband Effects on High‐Field Electron Transport in Quasi‐One‐Dimensional Systems

Two-dimensional hot-electron transport in GaAs-AlGaAs heterojunctions

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Intersubband Coulomb Scattering Effect on High-Field Hot-Electron Transport in a Quantum Wire

Hot-electron Mobility in Laterally Confined Systems

Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure

Thermal stability analysis of AlGaAs/GaAs heterojunction bipolar transistors with multiple emitter fingers

Effect of the Inter-Subband Scattering in Modulation-Doped AlxGa1-xN/GaN Heterostructures

Hot-electron Transient Transport in a Superlattice Miniband

Hot-electron Transient Transport in GaAs-AlGaAs Heterosystems with Finite Proton Relaxation Times

NONEQUILIBRIUM PHONON EFFECTS ON HOT CARRIER TRANSPORT AND THERMAL NOISE IN SEMICONDUCTOR HETEROSTRUCTURES

Study On The Subband Properties Of Alxga1-X/Gan Modulation-Doped Heterostructures

Transient hot-electron transport in GaAs with a Γ-L-X band structure

Two-dimensional Electron Transport in AlGaN/GaN Heterostructures

Nonlinear Transport in Quasi-Two-Dimensional Systems Driven by Intense Terahertz Fields

Mobility of Two-Dimensional Electron Gas in Gaas-Algaas Heterojunctions (Ii)