Abstract:The balance-equation approach developed by Lei and Ting for steady-state hot-electron transport is extended here to include nonequilibrium phonon occupation under the assumption that the effect of phonon-phonon interaction can be represented by an effective phonon relaxation time ${\ensuremath{\tau}}_{p}$, which may be mode dependent. Both single heterojunctions and multilayer quantum-well superlattices, as well as three-dimensional (3D) bulk systems, are discussed. A 3D phonon model and a quasi-2D phonon model are employed in describing the various interacting electron-phonon systems. The expressions for the frictional forces and energy transfer rates obtained in steady state are structurally similar to those without hot-phonon effects and the balance equations with finite phonon relaxation can be solved with the same computational effort as in the case of ${\ensuremath{\tau}}_{p}$=0. We have examined hot-phonon effects on the energy-transfer rate, the electron temperature, and the linear and nonlinear mobilities. It is shown that finite phonon relaxation generally decreases the phonon-induced Ohmic resistivity at a given lattice temperature. However, it significantly increases the electron temperature so that the nonlinear resistivity of the system is enhanced at large drift velocities. For an n-type GaAs heterosystem the normalized electron-energy-loss rate at ${\ensuremath{\tau}}_{p}$=3.5 ps is seen to be a factor of 5--10 smaller than that at ${\ensuremath{\tau}}_{p}$=0. The functional dependence of the energy-loss rate on carrier temperature shows considerable difference from the prediction of a carrier temperature-type theory, and is in reasonably good agreement with experiments.

Hot-electron Transient Transport in GaAs-AlGaAs Heterosystems with Finite Proton Relaxation Times

Transient hot-electron transport in GaAs with a Γ-L-X band structure

Nonlinear Balance Equations for Hot-Electron Transport with Finite Phonon-Relaxation Time

Hot-electron Transient Transport in a Superlattice Miniband

Thermal-noise Temperature of GaAs Heterosystems for Steady-State Hot-Electron Transport with Nonequilibrium Phonons

Effect of Nonequilibrium Phonons on Hot-Electron Spin Relaxation in N-Type Gaas Quantum Wells

Hot-electron Mobility in Laterally Confined Systems

Nonlinear Transport in Quasi-Two-Dimensional Systems Driven by Intense Terahertz Fields

Hot electron effect in GaAs/ AlGaAs multiple quantum wells

Effect of Hot Phonon Lifetime on Electron Velocity in Inaln/Aln/Gan Heterostructure Field Effect Transistors on Bulk Gan Substrates

Magneto-hot-electron Transport for GaAs-Ga1−xAl

Energy Relaxation of Hot Electrons Driven by Intense Terahertz Fields in Two-Dimensional Semiconductor Systems

Nonequilibrium Transport Time of Electrons in Bulk Gaas under High Electrical Field at Various Temperature Investigated by Terahertz Technology

Hot-Electron Energy Relaxation Time in Alinn/Aln/Gan 2deg Channels

Oscillatory Transient Velocity of Miniband Transport in One-Dimensional Superlattices

Two-dimensional hot-electron transport in GaAs-AlGaAs heterojunctions

Nonlinear Electronic Transport in Semiconductor Systems with Two Types of Carriers: Application to GaAs.

TEMPORAL DEVELOPMENT OF NONLINEAR BLOCH ELECTRON MINIBAND TRANSPORT

The Effect of Electron Confinement on the Transient Velocity Response in A Superlattice Miniband

Carrier Transport Simulation For Bulk Alxga1-Xas With A Gamma-L-X Band Structure Based On Lei-Ting Balance Equations

Hot‐electron Drift Velocity and Hot‐phonon Decay in AlInN/AlN/GaN