Abstract:Low-temperature growth of diamond films using the chemical vapor deposition (CVD) method is not so widely reported and its initial periods of nucleation and growth phenomenon are of particular interest to the researchers. Four sets of substrates were selected for growing diamond films using linear antenna microwave plasma-enhanced CVD (LA-MPCVD). Among them, silicon and sapphire substrates were pre-treated with detonation nanodiamond (DND) seeds before diamond growth, for enhancement of its nucleation. Carbon nanotube (CNT) films on Si substrates were also used as another template for LA-MPCVD diamond growth. To enhance diamond nucleation during CVD growth, some of the CNT films were again pre-treated by the electrophoretic deposition (EPD) of diamond nanoparticles. All these substrates were then put inside the LA-MPCVD chamber to grow diamond films under variable processing conditions. Microwave input powers (1100–2800 W), input power modes (pulse or continuous), antenna-to-stage distances (5–6.5 cm), process gas recipes (with or without CO2), methane gas percentages (3%–5%), and deposition times (11–120 min) were altered to investigate their effect on the growth of diamond film on the pre-treated substrates. The substrate temperatures were found to vary from as low as 170 °C to a maximum of 307 °C during the alteration of the different processing parameters. Contrary to the conventional MPCVD, it was observed that during the first hour of LA-MPCVD diamond growth, DND seeds and the nucleating structures do not coalesce together to make a continuous film. Deposition time was the most critical factor in fully covering the substrate surfaces with diamond film, since the substrate temperature could not become stable during the first hour of LA-MPCVD. CNTs were found to be oxidized rapidly under LA-MPCVD plasma conditions; therefore, a CO2-free process gas recipe was used to reduce CNT burning. Moreover, EPD-coated CNTs were found to be less oxidized by the LACVD plasma during diamond growth.

Nucleation and Growth of Cvd Diamond Films on Smooth Si Substrate Pretreated by Nanodiamond Powders

Growth behavior of CVD diamond films promoted by nanosized diamond powders

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

Growth of well-adhered and smooth diamond thin films on fused silica substrates

Selected-Area Diamond Deposition On Si Substrates Pretreated In Different Ways

Diamond Nucleation on Nonscratched Si Substrate Pretreated by Pulsed High-Temperature and High-Density Ch4-Plasma Beam

Preparation of CVD microcrystalline diamond powders on Cu substrates

Diamond Nucleation on Smooth Si3n4-Coated Substrate

Highly Dispersible Diamond Nanoparticles for Pretreatment of Diamond Films on Si Substrate

Diamond Nucleation on Unscratched Silicon Substrates Coated with Various Non-Diamond Carbon Films by Microwave Plasma-Enhanced Chemical Vapor Deposition

Discharge Induced Enhancement of Diamond Nucleation on Si Via Hot Filament Chemical Vapor Deposition

THE EFFECT OF DIAMOND FILM NUCLEATION AND GROWTH IN DIFFERENT SUBSTRATE PRETREATMENT METHODS

Effect of substrate roughness on the nucleation and growth behaviour of microwave plasma enhanced CVD diamond films – a case study

Chemical Vapor Deposition of Polycrystalline Diamond Films Onto the Si Substrates Coated by Si3n4 Intermediate Layers

Growth of Diamond Films on Si3n4 Coated Silicon Substrates

Influence of Pretreatments and Deposition Parameters on Diamond Nucleation Density in Diamond Film Deposition by Hot Filament Cvd

High quality CVD single crystal diamonds grown on nanorods patterned diamond seed

Nucleation and Growth of Diamond on Titanium Silicon Carbide by Microwave Plasma-Enhanced Chemical Vapor Deposition

Synthesis of Nanocrystalline Diamond Films on Smooth Wc-Co Cemented Carbide Substrates

Early Periods of Low-Temperature Linear Antenna CVD Nucleation and Growth Study of Nanocrystalline Diamond Films