Abstract:Direct current plasma enhanced chemical vapor deposition (CVD) was employed to create polycrystalline diamond films from CH4/H2gaseous mixture at 98 mbar pressure and various substrate temperatures between 720 °C and 960 °C. The Si chips with patterns of periodic masked and open seeded zones were used as substrates. The mask free seeded areas evolved into polycrystalline diamond films after CVD process. The diamond crystallites of the films featured single crystal ordering individually with distinct cubic (100) or octahedral (111) facets on the film surfaces. Notably, specific growth conditions were determined for obtaining diamond films composed of the crystallites of nanometre and micrometre scale. These conditions are differing from those observed for non-pattern-prepared Si substrates. The nano-crystalline diamonds emerged within the 4.5-5 A current range, with growth conditions involving 3% CH4/H2mixture at 98 mbar. The micro-crystalline diamonds (MCDs) predominantly characterized by well-developed rectangular (100) crystal faces on the film surface were successfully grown with current settings of 5.5-6 A, under 3% CH4/H2mixture at 98 mbar. Furthermore, MCDs characterized by entirely crystalline (111) diamond faces forming CVD film surface were attained within a growth parameter range of 4.5-5.8 A, employing 3% CH4/H2mixture for certain samples, or alternatively, utilizing 5 A with a 1.5% CH4/H2mixture for others. Upon thorough evaluation, it was established that SiO2, TiO2, and Cr masks are well-suited materials for the planar patterning of both nano- and micro-crystalline diamond films, and the bottom-up approach can pave the way for the production of diamond planar structures through CVD, facilitated by electron beam lithography (EBL).

Chemical Vapor Deposition of Polycrystalline Diamond Films Onto the Si Substrates Coated by Si3n4 Intermediate Layers

Growth of Diamond Films on Si3n4 Coated Silicon Substrates

Preparation of Anti-Reflective and Protective Diamond-Like Carbon Film on Si Substrate by Femto-Second Pulsed Laser Deposition

Selected-Area Diamond Deposition On Si Substrates Pretreated In Different Ways

Diamond Nucleation on Smooth Si3n4-Coated Substrate

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

Diamond Nucleation on Unscratched Silicon Substrates Coated with Various Non-Diamond Carbon Films by Microwave Plasma-Enhanced Chemical Vapor Deposition

Deposition of highly adhesive nanocrystalline diamond films on Ti substrates via diamond/SiC composite interlayers

Nano-crystalline Diamond Films Synthesized at Low Temperature and Low Pressure by Hot Filament Chemical Vapor Deposition

Deposition of diamond film on steel substrate by precoating an intermediate layer

Growth of well-adhered and smooth diamond thin films on fused silica substrates

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

Characteristics of Diamond Crystals Deposited on Quartz Substrates by Chemical Vapor Deposition

Morphologies and structures of chemical vapor deposited diamond films and film-substrate interfaces

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Fracture Strength and Toughness of Chemical-Vapor-deposited Polycrystalline Diamond Films

A Study of Interface Structure Between Diamond Film and Silicon Substrate

Super High-Concentration Si and N Doping of CVD Diamond Film by Thermal Decomposition of Silicon Nitride Substrate

Elective Deposition of Diamond Films on Si (100) Substrates

Nano- and micro-crystalline diamond film structuring with electron beam lithography mask

Carbon nitride films on diamond layers and their thermal behavior