Abstract:Thermal decomposition behavior of carbon nitride films prepared via nitrogen ion implantation into graphite in a special mass-separated low-energy ion beam system was investigated using in situ X-ray photoelectron spectrometry (XPS), residual gas analysis and secondary ion mass spectrometry. The XPS N1s line of the CNx films could be deconvoluted into three components, which are denoted as N(I), N(II) and N(III) states with binding energies of ∼398, 400 and 402 eV, respectively. A dramatic evolution of the N1s line during annealing of a room-temperature-implanted CNx film was revealed. Upon heating, the two main components N(I) and N(II) split, and the N(I) and N(III) components attenuated rapidly with increase in temperature until they vanished at 1000 °C, leaving only the N(II) component. The N(II) component exhibited no significant change during heating up to 800 °C but decreased upon further heating to a higher temperature. These results indicate that the N(II) state is more thermally stable than the N(I) state. The assignment of the bonding states between carbon and nitrogen atoms is discussed according to these results and the literature. The desorbed species upon heating of CNx films were monitored using a quadrupole mass spectrometer. The results showed that heating of CNx films led to desorption of N2 and C2N2 molecules. Above 1000 °C, highly significant emission of CN− ions was observed as a result of dissociative negative ionization of desorbing C2N2 molecules.

N1s electron binding energies of CNX thin films grown by magnetron sputtering at different temperature

Optical & Electronic Properties of Carbon Nitride Thin Films

Correlation Between Structure and Hardness of Magnetron Sputtering Deposited CNx Films

Probing Carbon Nanoparticles in Cnx Thin Films Using Raman Spectroscopy

Ion-beam-assisted Deposition of CNx Films

Thermal Stability of Carbon Nitride Thin Films Prepared by Electron Cyclotron Resonance Plasma Assisted Pulsed Laser Deposition

Synthesis and Thermal Decomposition of Carbon Nitride Films Prepared by Nitrogen Ion Implantation into Graphite

C3N4 Film Deposited by Synchrotron Radiation Assisted CVD

Cn(X) Films Deposited By Laser-Ablation Of Graphite Under Low-Energy Nitrogen-Ion Beam Bombardment

Investigation of carbon nitride films by cathodic arc evaporation

Electron energy loss spectroscopy of amorphous carbon nitride

Structures and bonding properties of carbon nitride films prepared by radio frequency magnetron sputtering

Optimizing hardness of CN x thin films by dc magnetron sputtering and a statistical approach

Investigation of Carbon Nitride Films Deposited by Ion Beam-Assisted Deposition with Low Bombarding Energy of N Ions

Effect of bombarding energy of N ions on composition, hardness and surface free energy of carbon nitride films

Preparation and Characterisation of Carbon Nitride Films Deposited by Pulsed Laser Arc Deposition

Spectra Characterization of Silicon Carbonitride Thin Films by Reactive Radio Frequency Sputtering

Formation of CNx thin films by reactive pulsed laser deposition assisted by electron cyclotron resonance microwave discharge

Study On Re-Sputtering During Cnx Film Deposition Through Spectroscopic Diagnostics Of Plasma

Studies of CN1 Films Deposited by Ion-Beam-Assisted Laser Ablation of Graphite

Spectroscopic Study on Pulsed Laser Ablation of Graphite Target in Ecr Nitrogen Plasma for Carbon Nitride Film Deposition