Abstract:The intense visible photoluminescence(PL) of porous Si has attracted much interest as it opens up the possibility of fabricating light-emitting devices based on silicon technology.Silicon carbide,especially(cubic) phase(β-SiC),is an attractive material for applications in high-temperature and high-power electronic devices for its wide band gap,high thermal conductivity and high electron saturation velocity.The development of SiC for opto-electronic applications has been the subject of intensive research for a long time.We report a preparation of SiC/Si heterostructure by ion implantation of overstoichiometric C~+ to single crystalline silicon substrate with a MEVVA(metal vapor vacuum arc) ion source,then a thermal annealing is performed,β-SiC layer is formed after that,which indicates that surface SiC/Si heterostructure is successfully prepared.The phase transformation characteristics in these SiC layers were studied using FTIR spectroscopy and a de-convolution scheme of the IR spectra into amorphous SiC and β-SiC components.X-ray Photon Spectroscopy(XPS) study the attribute of the C atom,the Atom Force Microscopy(AFM) images show the surface morphology of the annealed samples.The photoluminescence(PL) properties of the as-implanted and annealed samples was studied under the excitation of 355 nm.PL spectra show that there are two main peaks: 430 nm(2.9 eV) and 560 nm(2.2 eV),the PL intensity achieves the maximum at annealing temperature of 900 ℃,2 h.A nanoscale SiC unit quantum confinement theory and surface state theory are used to explain the phenomenon,it was indicated that the nano SiC and bulk SiC play key role in the PL process,and the surface stat of the SiC nanorod also.

Electron Field Emission from Sic Si Heterostrucutres Synthesized by Carbon Implantation Using A Mevva Ion Source

Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a MEVVA ion source

Electron Field Emission from Sic/Si Heterostructures Synthesized by Carbon Implantation Using A Metal Vapor Vacuum Arc Ion Source

Field Emission Properties of Ion Beam Synthesized SiC/Si Heterostructures by MEVVA Implantation

Electron Field Emission from SiC∕Si Heterostructures by High Temperature Carbon Implantation into Silicon

Electron Field Emission from SiC/Si Heterostructures Formed by Carbon Implantation into Silicon and Etching of the Top Silicon Layer

Influence of surface morphology on the field emission properties of planar SiC/Si heterostructures formed by ion beam synthesis

Phase Formation And Field Emission Properties Of Sic/Si Heterostructures Formed By Mevva Implantation

Field Emission Characteristics of SiC Capped Si Tip Array by Ion Beam Synthesis

Composition, structure and optical properties of SiC buried layer formed by high dose carbon implantation into Si using metal vapor vacuum arc ion source

Spectroscopic ellipsometry of SiC/Si heterostructures formed by C+ implantation into crystalline silicon

Structure and Photoluminescence Properties of Heterostructure SiC/Si Prepared by MEVVA Ion Implantation at Room Temperature

Structures and Field Emission Characteristics of Ion Irradiated Silicon Nanowire Arrays.

Spectroscopic Ellipsometry Study of SiC/Si Heterostructures Formed by High-Dose C+ Implantation into Silicon

Structures and Field Emission Properties of Silicon Nanowire Arrays Implanted with Energetic Carbon Ion Beam.

Infrared Absorption Spectroscopy Study of Phase Formation in SiC Layers Synthesized by Carbon Implantation into Silicon with a Metal Vapor Vacuum Arc Ion Source

FORMATION AND CHARACTERIZATION OF 3C-SIC BY CARBON-ION IMPLANTATION INTO SILICON WITH A MEVVA ION SOURCE

Growth Kinetics of Stoichiometric Sic Layers Formed by High Fluence Carbon Implantation into Silicon Using A Metal Vapor Vacuum Arc Ion Source

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Hrtem Study of SiC Buried Layer Formed by C+implantation in Silicon

Field Emission Study Of Sic Nanowires/Nanorods Directly Grown On Sic Ceramic Substrate