Wet Oxidation of Poly-Si1-xGex Layer Grown on SiO2/Si

Han Ping,Wu Mang,Ma Junru,Huang XiaoDong,Chen Hao,Hu Liqun,Zheng Youdou

DOI: https://doi.org/10.1557/proc-472-343

1997-01-01

Abstract:In this paper, we report on the experiment results of wet oxidation of Si 1-x Ge x on SiO 2 . AES and XPS measurements were performed to study the effect of the oxidation on the Si 1-x Ge x layer. A possible mechanism was proposed.

What problem does this paper attempt to address?

Wet Oxidation of Poly-Si{sub 1{minus}x}ge{sub X} Layer Grown on SiO{sub 2}/Si

Ping Han,Meng‐Che Wu,Ji Ma,Xianlei Huang,H. Chen,Liqun Hu,Yuqian Zheng

1997-01-01

Abstract:In this work, the experimental results of wet oxidation of poly-Si{sub 1{minus}x}Ge{sub x} grown on SiO{sub 2}/Si by rapid thermal process, very low pressure chemical vapor deposition (RTP/VLP-CVD) are reported. During the initial stage of the oxidation, the oxide with structure of Si{sub 1{minus}y}Ge{sub y}O{sub 2}(y<
Wet and Dry Oxidation of Polycrystalline Si x Ge 1-x Films

P. E. Hellberg,S. L. Zhang,F. M. d’Heurle,C. S. Petersson

DOI: https://doi.org/10.1557/PROC-533-111

2011-01-01

Abstract:Wet and dry oxidations of polycrystalline Si x Ge 1-x , with various compositions have been studied at different temperatures. The growth rate of SiO 2 is found to be enhanced by Ge, and the enhancement effect is more pronounced in H 2 O than in O 2 . A mathematical model, which assumes simultaneous oxidation of Si and Ge and reduction of GeO 2 by free Si available at the growing-oxide/Si x Ge 1-x interface, is found to give a quantitative description of the SiO 2 growth during thermal oxidation of Si x Ge 1-x . Kinetic parameters are extracted by comparing the model with experiments. The linear and parabolic rate constants for Si oxidation are determined on control Si (100) wafers and polycrystalline Si films. Simple expressions are used for the interdiffusion of Si and Ge in Si x Ge 1-x . For wet oxidation, the activation energy for the reaction rate constant of Ge oxidation is found to be smaller than that of Si oxidation.
Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Dongyuan Zhai,Zhipei Lv,Yi Zhao,Jiwu Lu

DOI: https://doi.org/10.1016/j.mee.2021.111574

IF: 2.3

2021-01-01

Microelectronic Engineering

Abstract:A novel thermal oxidation method for growing a thin SiO2 layer is proposed for improving the Al2O3/4H-SiC-based MOS structure characteristics. The method combines low oxygen partial pressure and high temperature oxidation during the SiO2 layer growth process. Compared with the conventional thermal oxidation method, the experimental results show that the proposed method can effectively reduce the density of trapped charges in the oxide and at the gate dielectric/4H-SiC epilayer interface, and improve the breakdown characteristic of the MOS structure. The interface trap density (D-it) at energy level of 0.2 eV below the conduction band edge (EC) of 4H-SiC in the sample by our proposed method is reduced to 6.6 x 10(12) cm(-2) eV(-1), which is about 4 times lower than the as deposited Al2O3/4H-SiC sample. The core reason underlying the improvement is the reduced SiO2 layer thickness and lower SiCxOy component concentration, as shown by X-ray photoelectron spectroscopy measurements.
Oxidation of Silicon–germanium Alloys. I. an Experimental Study

PE Hellberg,SL Zhang,FM dHeurle,CS Petersson

DOI: https://doi.org/10.1063/1.366443

IF: 2.877

1997-01-01

Journal of Applied Physics

Abstract:The oxidation of polycrystalline SixGe1−x films with different compositions (i.e., different values of x) is carried out in pyrogenic steam at 800 °C for various lengths of time. It is found that the oxidation is enhanced by the presence of germanium and that the enhancement effect is more pronounced for the films richer in germanium. A mixed oxide in the form of either (Si,Ge)O2 or SiO2–GeO2 is found at the sample surface if the initial SixGe1−x contains more than 50% of germanium. However, a surface silicon cap layer of about 14 nm is found to have a significant impact on the oxidation of the Si0.5Ge0.5 films; it leads to the growth of about 115-nm-thick SiO2 which is about four times that of the SiO2 resulting from the oxidation of the cap layer itself. On the SixGe1−x films with only 30% of germanium, the SiO2 continues to grow after oxidation for 180 min resulting in 233-nm-thick SiO2 which is about 2.4 times greater than the SiO2 grown on 〈100〉 silicon substrates. Rejection of germanium results in piling up of germanium at the interface between the growing SiO2 and the remaining SixGe1−x. Substantial interdiffusion of silicon and germanium takes place in the remaining SixGe1−x. The experimental results are discussed in terms of thermodynamics and kinetics.
Low-Temperature Floating Plasma Oxidation of Poly-SiGe

Fan Zhineng,Zhao Gang,Chu Paul K.,Jin Zhonghe,Kwok Hoi S.,Wong Man

DOI: https://doi.org/10.1557/proc-508-157

1998-01-01

Abstract:Low temperature oxidation is an essential process for thin-film transistors (TFT) used in active-matrix liquid crystal displays (AMLCD). However, low temperature oxidation gives rise to defects at SiO 2 /poly-SiGe interfaces. We have recently developed a novel plasma oxidation method for poly-SiGe materials. The poly-SiGe wafers are soaked in 0.1 Torr pure oxygen RF (Radio Frequency) plasma and isolated. That is, the sample voltage is the same as the sheath potential of the floating wall, which is always negative since electrons move faster than ions.The defects caused by ion impact can therefore be reduced. No heating is applied during oxidation, as the sample is heated slightly by the plasma. Under our conditions, the temperature is below 100°C even after oxidation for two hours. Depth profiles are acquired by AES and the oxide/substrate interface is examined by XPS. NMOS devices fabricated using this gate oxide show good characteristics.
Surface segregation and content variation in Si1-xGex growth on Si in ultrahigh vacuum by CVD

Jingyun Huang,Huanming Li,Zhizhen Ye,Xiaobo Jiang,Jun Yuan,Lei Wang,Binghui Zhao,Duanlin Que

1999-01-01

Abstract:SiGe epilayers were grown on Si substrate by UHV/CVD. The epilayers were studied by SIMS and XPS. SIMS results show that Ge content on the surface is less than the uniform Ge content in the epilayers while there is no variation of Si content on the surface. The surface chemical composition was analyzed with XPS for the samples with or without dipping into a dilute HF (10 %) solution. XPS results show that spontaneous oxidation of the epilayers in air is responsible for the Ge depletion on the surface.
Wet-chemical Growth of an Ultra-Thin Silicon Oxide Film and Its Composition and Thickness Measured by SRPES

王科范,徐彭寿,张伟风,顾玉宗,郑海务

DOI: https://doi.org/10.3321/j.issn:0253-3219.2008.04.004

2008-01-01

Abstract:An ultra-thin oxide film was obtained by oxidizing the H-terminated Si(001)surface by absolute C2H5OH solution.AFM observations showed that surface of the oxide film was very flat.Synchrotron radiation photoelectron spectroscopy(SRPES)analysis demonstrated that the oxide film was mainly composed of SiO2,with an average thickness of about 0.24 nm.At 500℃ of the substrate temperature,Ge quantum dots(QDs)of 9.5×1010 cm-2 in density and(25±5)nm in size were grown successfully on the SiO2 film.The result indicates that the SiO2 film made by wet-chemical method can act as epitaxial surface to grow Ge QDs of decreased size and increased density.
Effect of Carbon on Oxidized Si1-x-yGexCy Thin Films

王亚东,叶志镇,黄靖云,赵炳辉

DOI: https://doi.org/10.3321/j.issn:0253-4177.2001.09.006

2001-01-01

Abstract:The oxidation kinetics of SiO2/Si1-x-yGexCy system (grown on Si substrate) was studied by ellipsometry and Fourier transform infrared spectroscopy. The oxidized rate decreases with the increase of the substitutional carbon at 900°C. The carbon has no obvious effect on the oxidized rate at high oxidation temperature (1000°C) because the substitutional C gradually precipitates to form cubic silicon carbide (β-SiC). It is suggested that the oxidation temperature should be kept below 1000°C so as to minimize the degradation of the underlying Si1-x-yGexCy layer.
Evidence of Layer-by-Layer Oxidation of Ge Surfaces by Plasma Oxidation Through Al2O3

R. Zhang,P. C. Huang,J. C. Lin,M. Takenaka,S. Takagi

DOI: https://doi.org/10.1149/05009.0699ecst

2012-01-01

Abstract:The ultrathin GeOx/Ge interfaces formed on Ge (100) and (111) surfaces have been characterized using XPS. The oscillating behaviors of the Ge 1+ and the 2+ states on Ge (100) surfaces and the Ge 1+ and the 3+ states on Ge (111) surfaces are observed in period of ~0.3 and ~0.5 nm, respectively, during the post plasma oxidation of the Ge MOS interfaces. These phenomena strongly suggest an atomic layer-by-layer oxidation of GeOx/Ge interfaces on both Ge (100) and (111) surfaces.
Study of Si and Ge growth on Si(100) surface

Lei Wang,JingChang Tang,Deren Yang,Xuesen Wang,Yanfang Hu

2002-01-01

Abstract:Utilizing scanning tunneling microscope and UHV system, the growth of Si and Ge on Si(100) surface have been investigated. The morphological and structural properties of the surfaces are studies. A nano-patterned Si film can be produced by homoepitaxy on Si(100). The growth of Ge on Si(100) will form regular 3D islands. On the multilayer film of Si/Ge/Si(100), the Ge will form regular small and big is lands. The big islands are probably stabilized by a Ge/Si/Ge shell structure.
Atomic Layer-By-Layer Oxidation Of Ge (100) And (111) Surfaces By Plasma Post Oxidation Of Al2o3/Ge Structures

rui zhang,pochin huang,juchin lin,mitsuru takenaka,shinichi takagi

DOI: https://doi.org/10.1063/1.4794013

IF: 4

2013-01-01

Applied Physics Letters

Abstract:The ultrathin GeOx/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al2O3/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeOx layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of similar to 0.3 nm with an increase in the GeOx thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of similar to 0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeOx/Ge interfaces on Ge (100) and (111) surfaces. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794013]
Ge Segregation in Si1- x Gex Alloy Grown on Si by UHV/CVD

吴贵斌,崔继锋,黄靖云,叶志镇

DOI: https://doi.org/10.3969/j.issn.1673-2812.2004.02.002

2004-01-01

Abstract:SiGe epilayers were grown on Si substrate by UHV/CVD.We have investigated Ge segregation at the interface and surface by SIMS and XPS.The SIMS and XPS results revealed that Ge segregation is responsible for the Ge concentration difference between surface and inside.And in the growth chamber H adlayer at the surface prevents segregation of Ge at low temperatures,and as the temperature increases the hydrogen desorbs leaving a partly uncovered Si/Ge surface which condition is favourable for segregation,islanding and oxygen attack.
Interface Reaction Kinetics in SiGe Oxidation

Xiuyan Li,Yusuke Noma,Woojin Song,Tomonori Nishimura,Akira Toriumi

DOI: https://doi.org/10.1063/1.5109746

IF: 4

2019-01-01

Applied Physics Letters

Abstract:The oxidation of SiGe is very different from that of Si or Ge, leading to poor interface quality in oxidized SiGe gate stacks. In this work, SiGe oxidation kinetics and its effects on the generation of interface defects are discussed by considering the GeO desorption as well as Ge precipitation. Unlike GeO2/Ge, no GeO desorption associated with the reaction between GeO2 and Ge is detected in GeO2/SiGe below 700 °C. Instead, GeO desorption related to a reaction between GeO2 and Si is observed above 800 °C; however, it is suppressed by inserting a thin SiO2 layer on the SiGe surface. Based on experimental results and thermodynamic calculations, the SiGe oxidation kinetics is reconsidered in conjunction with the interface properties in SiGe gate stacks. The present results provide clear insights into a viable solution for high performance SiGe gate stacks.
Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Xu Wenbin,Dong Shurong,Wang Demiao

2006-01-01

Abstract:Oxynitride films utilized as gate insulator have been the focus of research for a long time. So far, these films have been mainly grown by chemical methods such as PECVD. In this work, SiOxNy films were deposited via r.f. reactive sputtering from pure Silicon target with different nitrogen/oxygen mixture. A modified Berg reactive sputtering model was adopted to investigate the dependence of deposition rate and films composition on the nitrogen/oxygen flow ratio. The films deposited exhibited amorphous microstructure. The shift of IR absorption peak associated with Si-O or Si-N stretching mode can also be observed in the FTIR results. MOS sandwich structure was further fabricated for electrical measurement. The variation of dielectric constant (in the 4.3∼6.7 range) and leakage currents was found to be related with film composition. Finally, the evolution of conductivity in these films was discussed.
Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

ZN Fan,G Zhao,PK Chu,ZH Jin,HS Kwok,M Wong

DOI: https://doi.org/10.1063/1.121834

IF: 4

1998-01-01

Applied Physics Letters

Abstract:Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.
Retardation of strain relaxation in Si/SiGe/Si heterostructures during high temperature oxidation

ChangChun Chen,A.-C Lindgren,ShiLi Zhang,DeZhang Zhu

DOI: https://doi.org/10.1016/S0168-583X(02)01035-2

2002-01-01

Abstract:The variations of strain stored in Si/Si1−xGex/Si heteroepitaxial system with SiGe thickness below its critical thickness during high temperature oxidation (in O2–C2H2Cl2 ambient) or annealing (in Ar ambient) processing were investigated by ion channeling angular scan and high resolution X-ray diffraction. The retardation of strain relaxation in an oxidized sample compared with that in an Ar-annealed sample was observed. The depth profiles of Ge determined by SIMS indicated that Ge diffusion in the annealed sample is larger than that in the oxidized sample. The reduced diffusion of Ge in the oxidized sample compared to the Ar-annealed sample is responsible for retardation of strain relaxation.
The Recrystallization Properties of Poly-GexSi1-xON SiO2/Si

Jiang N.,Ma J. R.,Wu M.,Huang X. D.,Gu S. L.,Yu S. D.,Hu L. Q.,Zheng Y. D.

DOI: https://doi.org/10.1557/proc-472-409

1997-01-01

Abstract:In this paper, we have developed a new way to recrystallize the poly-GeSi on SiO2. 300nm poly-GeSi was grown by RTP/VLP-CVD on SiO2/Si, and then amorphized by 180 keV-Si+ ion implantation with dose of 2×1014 cm'2. An amorphized region with the damage distribution was formed. After subsequent annealing process, the comparison between the XRD scans and Raman spectra of poly-GeSi and poly-Si indicated that the annealed poly-GeSi was more recrystallized than the poly-Si in the same conditions, this was the inducement of Ge in the annealing process. The segregation of Ge atoms in the heavy damaged region would enhance this inducement. The XTEM showed the longitudinal pattern of GeSi grains which meant the longitudinal sizes were much greater than the horizontal sizes. After annealing process, the final GeSi grain sizes were greater than the poly-Si grain sizes processed in SSIC with the same implantation conditions.
Study on Room-Temperature Wet Oxidation of Silicon Catalyzed by Copper

Xianhui Liu,Lele Jia,Tongqing Zou,Chengjie Cai,Bohao Liang,Jinxin Xiong,Jie Chao,Biao Feng,Lijun Yang,Shaozhou Li

DOI: https://doi.org/10.1021/acs.langmuir.2c02467

IF: 3.9

2023-01-01

Langmuir

Abstract:The anomalously fast growth of the silicon oxide layer at room temperature has been reported for the Cu/Si system. However, the systematical exploration of such a reaction under humidity conditions has not yet been carried out. Through one combination of the experiments and first-principle density functional theory (DFT) simulations, here, we investigate the influence of the imparted Cu atoms in Cu/Si on the oxidation of Si with the presence of H2O. The Cu addition causes the geometric distortion of the Si lattice, which alters the charge transfer to absorbed H2O and decreases its dissociation energy. This results in the experimental formation of much defective SiOx for the Cu/Si system than bare Si under humidity conditions. Furthermore, the presence of such an oxide structure and the catalytic effect of Cu provide the suitable diffusion channels and adsorption sites for the H2O transport and its dissociation. This enhances the oxidation rate of Si consequently and results in the fast growth of the oxide layer on Cu/Si at room temperature.
Investigating the Composition and Conductance Distributions on Highly GeSi Mixed Quantum Dots and Inside Oxidation Problem

F. F. Ye,Y. J. Ma,Y. Lv,Z. M. Jiang,X. J. Yang

DOI: https://doi.org/10.1186/s11671-015-1185-8

2015-01-01

Nanoscale Research Letters

Abstract:With the help of a nanoscale trench, the composition and conductance distributions of single GeSi quantum dots (QDs) are obtained by conductive atomic force microscopy combined with selective chemical etching. However, the obtained composition and current distributions are unwonted and inconsistent on the QDs grown at 680 °C. With a series of confirmatory experiments, it is suggested that a thick oxide layer is formed and remains on the QDs’ surface after etching. Though this selective chemical etching has already been widely applied to investigate the composition distribution of GeSi nanostructures, the oxidation problem has not been concerned yet. Our results indicate that the oxidation problem could not be ignored on highly GeSi mixed QDs. After removing the oxide layer, the composition and conductance distributions as well as their correlation are obtained. The results suggest that QDs’ current distribution is mainly determined by the topographic shape, while the absolute current values are influenced by the Ge/Si contents.
Molecular-dynamics simulation of Si1-xGex epitaxial growth on Si(1 0 0)

Jian Xu,J.Y Feng

DOI: https://doi.org/10.1016/j.nimb.2003.09.041

2004-01-01

Abstract:Abstract Molecular dynamics study of the Si 1− x Ge x epitaxial growth on Si(1 0 0) substrate utilizing the Stillinger–Weber two- and three-body interaction potentials was carried out. The Stranski–Krastanov growth mechanism of the Si 1− x Ge x strain layers on Si(1 0 0) was studied and compared with experiment results. The influence of different x on the epitaxial growth layers morphology was investigated. The structure properties of the Si 1− x Ge x layers were evaluated.

Wet Oxidation of Poly-Si1-xGex Layer Grown on SiO2/Si

Wet Oxidation of Poly-Si{sub 1{minus}x}ge{sub X} Layer Grown on SiO{sub 2}/Si

Wet and Dry Oxidation of Polycrystalline Si x Ge 1-x Films

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Oxidation of Silicon–germanium Alloys. I. an Experimental Study

Low-Temperature Floating Plasma Oxidation of Poly-SiGe

Surface segregation and content variation in Si1-xGex growth on Si in ultrahigh vacuum by CVD

Wet-chemical Growth of an Ultra-Thin Silicon Oxide Film and Its Composition and Thickness Measured by SRPES

Effect of Carbon on Oxidized Si1-x-yGexCy Thin Films

Evidence of Layer-by-Layer Oxidation of Ge Surfaces by Plasma Oxidation Through Al2O3

Study of Si and Ge growth on Si(100) surface

Atomic Layer-By-Layer Oxidation Of Ge (100) And (111) Surfaces By Plasma Post Oxidation Of Al2o3/Ge Structures

Ge Segregation in Si1- x Gex Alloy Grown on Si by UHV/CVD

Interface Reaction Kinetics in SiGe Oxidation

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Retardation of strain relaxation in Si/SiGe/Si heterostructures during high temperature oxidation

The Recrystallization Properties of Poly-GexSi1-xON SiO2/Si

Study on Room-Temperature Wet Oxidation of Silicon Catalyzed by Copper

Investigating the Composition and Conductance Distributions on Highly GeSi Mixed Quantum Dots and Inside Oxidation Problem

Molecular-dynamics simulation of Si1-xGex epitaxial growth on Si(1 0 0)