Wet and Dry Oxidation of Polycrystalline Si x Ge 1-x Films

P. E. Hellberg,S. L. Zhang,F. M. d’Heurle,C. S. Petersson

DOI: https://doi.org/10.1557/PROC-533-111

2011-01-01

Abstract:Wet and dry oxidations of polycrystalline Si x Ge 1-x , with various compositions have been studied at different temperatures. The growth rate of SiO 2 is found to be enhanced by Ge, and the enhancement effect is more pronounced in H 2 O than in O 2 . A mathematical model, which assumes simultaneous oxidation of Si and Ge and reduction of GeO 2 by free Si available at the growing-oxide/Si x Ge 1-x interface, is found to give a quantitative description of the SiO 2 growth during thermal oxidation of Si x Ge 1-x . Kinetic parameters are extracted by comparing the model with experiments. The linear and parabolic rate constants for Si oxidation are determined on control Si (100) wafers and polycrystalline Si films. Simple expressions are used for the interdiffusion of Si and Ge in Si x Ge 1-x . For wet oxidation, the activation energy for the reaction rate constant of Ge oxidation is found to be smaller than that of Si oxidation.