Dielectric properties of Ba(Zn 1/3 Ta 2/3 )O 3 thin films derived from a sol-gel process

ZHOU JI ,D. J. BARBER

DOI: https://doi.org/10.1023/A:1018573730172

1997-01-01

Journal of Materials Science Letters

Abstract:Without Abstract

What problem does this paper attempt to address?

Dielectric Properties And High Tunability Of Ba(Ti0.7zr0.3)O-3 Ceramics Under Dc Electric Field

zhi yu,chen ang,ruyan guo,a s bhalla

DOI: https://doi.org/10.1063/1.1498496

IF: 4

2002-01-01

Applied Physics Letters

Abstract:The effect of dc electric field (E) on the dielectric properties of Ba(Ti0.7Zr0.3)O-3 ceramics with an obvious ferroelectric-relaxor behavior (T(m)similar to229 K, 10 kHz) is reported. The dielectric constant is greatly suppressed and a low loss is obtained under dc electric fields (less than or equal to40 kV/cm). The low loss (tan deltasimilar to0.002) and high tunability (similar to45%) were obtained for the Ba(Ti0.7Zr0.3)O-3 ceramics around 300 K, indicating that it is a promising candidate for tunable materials at room temperature. The field dependence of the temperature (T-m) of the dielectric constant maximum follows the DeltaT(m)similar toE(2/3) relation, indicating a second-order phase-transition-like behavior. (C) 2002 American Institute of Physics.
Dielectric properties of sol-gel derived barium-strontium-titanate (Ba(0.4)Sr(0.6)TiO(3)) thin films

S Lahiry,V Gupta,K Sreenivas,A Mansingh

DOI: https://doi.org/10.1109/58.852067

Abstract:The structural and dielectric properties of sol-gel derived barium-strontium-titanate (Ba(0.4)Sr(0.6)TiO(3 )) thin films have been investigated. The as-fired films are found to be amorphous, and films crystallize to a cubic phase after a post deposition annealing at 700 degrees C for one hour in air. The variation of dielectric constant with temperature and field was investigated as a function of film thickness. These films display a nonlinear dielectric response that can be described in terms of a power series expansion of the free energy in polarization as in Landau-Ginzburg-Devonshire approach. The measured room temperature dielectric constant (epsilon') of the film was about 320. The dielectric constant did not show any significant frequency dependence up to 100 kHz. The temperature dependence of dielectric constant exhibited a diffused ferroelectric to paraelectric phase transition at -60 degrees C. The room temperature dielectric constant and magnitude of the dielectric peak at the Curie point was dependent on the thickness of the film. The obtained dielectric data on sol-gel barium strontium titanate thin films on platinized substrates were analyzed in the light of a barrier layer model.
Preparation and Structure of Ba(Mg 1/3 Ta 2/3 )O 3 Thin Films Derived from a Sol-Gel Process

Ji Zhou,Qing-Xin Su,K. M. Moulding,D. J. Barber

DOI: https://doi.org/10.1007/bf00275349

1996-01-01

Journal of Materials Science Letters

Abstract:Ba(Mg1/3Ta2/3)O3 thin films were prepared by a sol-gel process involving the reaction of barium isopropoxide, tantalum ethoxide, and magnesium acetate in 2-methoxyethanol and subsequently hydrolysis, spin-coating, and heat treatment. Transmission electron microscopy, x-ray diffraction, and Raman spectroscopy were used for the characterization of the thin films. It was shown that the thin films tend to crystallize with small grains sized below 100 nm. Crystalline phase with cubic (disordered) perovskite structure was formed in the samples annealed at a very low temperature (below 500 °C), and well-crystallized thin films were obtained at 700 °C. Although disordered perovskite is dominant in the thin films annealed below 1000 °C, a low volume fraction of 1 : 2 ordering domains was found in the samples and grows with an increase of annealing temperature.
In-plane Dielectric Properties of Epitaxial 0.65pb(mg1∕3nb2∕3)o3−0.35pbtio3 Thin Films in a Very Wide Frequency Range

Y Wang,YL Cheng,KC Cheng,HLW Chan,CL Choy,ZR Liu

DOI: https://doi.org/10.1063/1.1784517

IF: 4

2004-01-01

Applied Physics Letters

Abstract:The in-plane dielectric properties of epitaxial 0.65Pb(Mg1∕3Nb2∕3)O3−0.35PbTiO3 thin films deposited on MgO by pulsed-laser ablation were determined over a wide frequency range and compared with single crystals and ceramics. Depressed values of the dielectric constant, induced diffused phase transition, dielectric relaxation, and nonlinear behaviors were observed in the films. The overall dielectric behaviors of the films were found to be a mixture of that of relaxor ferroelectrics and normal ferroelectrics. The correlation of the microstructural features (mechanical clamping, small grain size, and epitaxial nature) and the dielectric behaviors was discussed.
DIELECTRIC BEHAVIORS OF ZnFe2O4 – SiO2 COMPOSITE THIN FILMS PREPARED BY SOL-GEL METHOD

H Jiang,HW Liu,H Yu,F Gao,JM Liu

DOI: https://doi.org/10.1142/s0217979205031523

2005-01-01

International Journal of Modern Physics B

Abstract:The dielectric property of ZnFe2O4 – SiO2 composite thin films deposited on Pt - Ti -SiO2- Si substrates, prepared by sol-gel method, are investigated. It is observed that the thin films consist of ZnFe2O4 nanoparticles embedded in the matrix of SiO2. Such a composite structure exhibits a significantly enhanced dielectric constant with respect to SiO2 thin films without too large dielectric loss enhancement.
Dielectric Properties of Oriented PbZrO3 Thin Films Grown by Sol-Gel Process

JW Zhai,Y Yao,X Li,TF Hung,ZK Xu,H Chen,EV Colla,TB Wu

DOI: https://doi.org/10.1063/1.1505981

IF: 2.877

2002-01-01

Journal of Applied Physics

Abstract:Antiferroelectric PbZrO3 (PZ) films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4{110} superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm2. Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO3 on Pt/Ti/SiO2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops.
Colossal Dielectric Performance of Pure Barium Titanate Ceramics Consolidated by Spark Plasma Sintering

X. Yang,D. Li,Z. H. Ren,R. G. Zeng,S. Y. Gong,D. K. Zhou,H. Tian,J. X. Li,G. Xu,Z. J. Shen,G. R. Han

DOI: https://doi.org/10.1039/c6ra14741k

IF: 4.036

2016-01-01

RSC Advances

Abstract:The pure BaTiO3nanoceramics have a high permittivity up to 6 × 104and a low dielectric loss. The polaron dipoles configured by oxygen vacancies and Ti3+cations within grains could contribute to the colossal dielectric permittivity of the ceramics.
Crystallization, phase evolution and ferroelectric properties of sol-gel-synthesized Ba(Ti0.8Zr0.2)O3-x(Ba 0.7Ca0.3)TiO3 thin films

Zengmei Wang,Kuan Zhao,Xinli Guo,Wei Sun,HuaLong Jiang,XueQin Han,Xutang Tao,zhenxiang cheng,HongYang Zhao,Hideo Kimura,Guoliang Yuan,Jiang Yin,Zhiguo Liu

DOI: https://doi.org/10.1039/c2tc00020b

IF: 6.4

2013-01-01

Journal of Materials Chemistry C

Abstract:A lead-free piezoelectric material with ultra-high properties, Ba(Ti0.8Zr0.2)O3-x(Ba0.7Ca0.3)TiO3(BZT-xBCT) nanocrystals was synthesized via a sol-gel method, and the corresponding thin films were also deposited on Pt/Ti/SiO2/Si substrates by a spin-coating approach. The BZT-xBCT thin film exhibited a high remnant polarization of 22.15 mu C cm(-2) with a large coercive field of 68.06 kV cm(-1). The resultant gel is calcined at various elevated temperatures and studied with FTIR/XRD/Raman/DSC-TGA/AFM/SEM techniques for gel composition, crystallization, phase transition, thermochemistry and the morphology of the film. Although the room temperature crystal structure of the BZT-xBCT nanocrystals appears to be a standard perovskite structure by conventional X-ray diffraction (XRD), Raman spectroscopy demonstrates the presence of non-centrosymmetric regions arising from the off-centering of the titanium (zirconium) atoms. The Raman spectra findings demonstrate the degree by which the tetragonal phase grows with the increase of calcining temperature in BZT-0.5BCT, and the characteristic ferroelectric-ferroelectric phase transition in BZT-xBCT while going through the MPB process. The structural and constituent evolution for the conversion process from gel to ceramic, as well as the formation mechanism of the BZT-0.5BCT crystallite, were also elucidated.
Sol–gel derived Pb(Zr,Ti)O3 thin films: Residual stress and electrical properties

R.J. Ong,T.A. Berfield,N.R. Sottos,D.A. Payne

DOI: https://doi.org/10.1016/j.jeurceramsoc.2005.03.103

IF: 5.7

2005-01-01

Journal of the European Ceramic Society

Abstract:Pb(Zr,Ti)O3 compositions are under investigation for applications that include integrated capacitors, piezoelectric sensors, and actuators. Sol–gel synthesis and spin coating are popular routes to the formation of high quality, dense, crack free, insulating films. However, the electrical properties of the films are often different than those measured for bulk specimens of the same composition. Pb(Zr0.53Ti0.47)O3 films were deposited from a 2-methoxyethanol based sol–gel system onto Pt/Ti/SiO2//Si substrates via spin-casting. Multiple layers were sequentially deposited and heat-treated to 650°C with the use of a PbO overcoat to ensure complete perovskite phase formation. Film thickness was varied from 0.19 to 0.5μm to study the effect of thickness and residual stress on the dielectric and piezoelectric properties of the polarizable and deformable material. Ex-situ wafer curvature measurements, combined with cross-sectional scanning electron microscopy, allowed for the determination of residual stresses in the thin films calculated by the Stoney equation. The macroscopic boundary conditions were then related to the measured properties of interest, namely dielectric constant, tan δ, and piezoelectric strain coefficient. Measured dielectric constants varied from ∼750 to ∼1000, while d33 values ranged from 30 to 44pm/V, as determined by single-beam heterodyne laser interferometry measurements.

materials science, ceramics
Preparation on the [(Pb,La) (Zr,Ti)O3] ferroelectric thin films by using the Sol-Gel processing

PeiYu Yan,Qijiang Cai,Longtu Li,Xiaowen Zhang

1995-01-01

Abstract:The decomposition and crystallization of [(Pb,La) (Zr,Ti)O3] gel and the microstructure of [(Pb,La)(Zr,Ti)O3] thin films were studied with the DTA TG, XRD and SEM method. It was found that (1) in order to obtain the dens and crack-free [(Pb,La) (Zr,Ti)O3] thin films, the precursor sol of appropriate viscosity should be used which is obtained by controlling the concentration and hydrolysis degree of the precursor; (2) to keep a slow heating-rate in the heat treatment process is quite vital for eliminating the cracking of thin films; (3) the PT transition layer promotes the crystallization of [(Pb,La) (Zr,Ti)O3] films on the platinized silicon; (4) the dielectric constants of Sol-Gel derived [(Pb,La) (Zr,Ti)O3]/PT composite thin films are of 500-600, and their dissipation factors are less than 0.1, besides, their remanent polarization and coercive field are of 9.3 ��C/cm2 and 50kV/cm respectively.
Effect of annealing temperature on the energy storage properties of Ba(Zr0.35Ti0.65)O3 thin films prepared by sol–gel method

Xipeng Yue,Zheng Sun,Yanji Sun,Zhengfei Yu,Yuting Niu,Yangyang Xie,Hongling Guo,Fang Wang,Kailiang Zhang

DOI: https://doi.org/10.1007/s10854-024-12404-y

2024-03-25

Journal of Materials Science Materials in Electronics

Abstract:Ferroelectric thin films of Ba(Zr 0.35 Ti 0.65 )O 3 (BZT35) were fabricated on Pt/Ti/SiO 2 /Si substrate by sol–gel method. Subsequent annealing treatments were carried out in an oxygen atmosphere at different temperatures. The study investigated how various annealing temperatures impacted the phase structure, surface topography, ferroelectric, and dielectric properties of the BZT35 films. According to XRD results, all the samples showed perovskite structure. With the gradual increase of temperature, the characteristic peak (110) intensity increases gradually. The BZT35 films annealed at 625°C exhibited good energy storage properties (W rec = 32.52 J/cm 3 , η = 89.4%), low leakage current density (J = 1.65 × 10 –4 A/cm 2 ), and high breakdown field strength (E BD = 3.57 MV/cm). This is due to the improved denseness and crystallinity of the film and the balance between polarization and breakdown strength. Moreover, the BZT35 film exhibits outstanding frequency stability (500 Hz-20 kHz) under annealing at 625 °C. The promising application of BZT35 in energy storage is suggested by its excellent properties.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
SOL-GEL DERIVED BaTiO3 THIN FILMS WITH EMBEDDED SILVER NANOPARTICLES: PREPARATION AND DIELECTRIC PROPERTIES

J Zhou,LT Li,ZL Gui,XW Zhang,DJ Barber

DOI: https://doi.org/10.1016/s0965-9773(97)00171-2

1997-01-01

Nanostructured Materials

Abstract:Composites of ferroelectric BaTiO3 thin film with embedded silver nanoparticles have been produced by the sol-gel process. The structure of the composite and the formation process of the silver particles were studied by x-ray diffraction and transmission electron microscopy. The dielectric properties of the composite were measured and a dependence in reverse to percolation law was shown. © 1997 Acta Metallurgica Inc.
Synthesis, Characterization and Electrical Properties of Barium Titanate Films Fabricated by Hydrothermal Method

Jianling Zhao,Xiaohui Wang,Longtu Li,Xixin Wang,Yangxian Li

DOI: https://doi.org/10.4028/www.scientific.net/kem.368-372.47

2008-01-01

Key Engineering Materials

Abstract:BaTiO3 films with a thickness up to 3 μm were fabricated under the hydrothermal conditions. It was found that the crystallinity of BaTiO3 increases with the concentration of Ba(OH)2 solutions. Along with the increasing of time, the crystallinity of BaTiO3 increases, reaches the maximum value and then decreases. The measured values of remanent polarization (Pr) and coercive field (Ec) are 1.74μC/cm2 and 24KV/cm. The leakage of the films at 1V is 10-7A/cm2. The dielectric constant and loss tangent of hydrothermal derived BaTiO3 film at a frequency of 1 KHz were 600 and 0.2, respectively.
Growth, Structure And Dielectric Characteristics Of Ba[(Fe1/2nb1/2)(0.1)Ti-0.9]O-3 Thin Films By Pulsed Laser Deposition

wei zhang,lei li,xiang ming chen

DOI: https://doi.org/10.1063/1.4789820

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:Ba[(Fe1/2Nb1/2)(0.1)Ti-0.9]O-3 thin films were grown on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition at 823 and 923 K. X-ray diffraction analysis suggested the cubic perovskite structure at room temperature. The dielectric properties were investigated at various frequencies (100-10(6) Hz). Three dielectric abnormalities were observed in the temperature range of 120 to 400 K. The abrupt change in dielectric constant and dielectric loss around 288 K demonstrated the diffused ferroelectric behavior of the thin films. The polarization-electric filed (P-E) loops were measured at different temperatures. Slimmer P-E hysteresis loops were observed with increasing temperature. Raman spectra of Ba[(Fe1/2Nb1/2)(0.1)Ti-0.9]O-3 thin films at room temperature indicated local C-4v symmetry caused by the displacement of Ti4+ ions. Extra Raman peaks in the thin films compared to that of the bulk ceramic implied extra structure distortion in the thin films. The stress relating to the misfit of the thermal expansion coefficient between the substrate and the thin film might contribute the structure distortion in the thin films. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789820]
Composition and Temperature Dependent Electrical Properties of BaTiO 3 :Zno Composites

Guang-Jian Wu,Peng-Xiao Nie,Ji Zhang,Yu-Shuang Cui,Shan-Tao Zhang

DOI: https://doi.org/10.1016/j.matlet.2015.11.009

IF: 3

2015-01-01

Materials Letters

Abstract:Ferroelectric/polar semiconductor BaTiO3:xZnO composites (BT:xZnO) have been prepared and investigated. The ZnO particles distribute at the BT grain boundaries to form 0–3 type composites, i.e., the isolated 0-dimensional ZnO particles are embedded in the 3-dimensional BT matrix. With increasing ZnO content, the Curie temperature keeps constant, however, both the dielectric constant and ferroelectric polarization of the composites increase, reaching the maximum at x=0.3, and then tend to decrease. Furthermore, the composite has improved temperature stability of ferroelectric polarization and field-induced strain up to ~100°C. It is believed that ZnO can induce a built-in electric field which has influence on the domain switching and thus on the observed composition- and temperature-dependent electrical properties. This work may provide some new clues for developing ferroelectric composites with high performance.
Structural characterization and optical properties of Sol-gel-derived polycrystalline Pb(Zr 0.35 Ti 0.65 )O 3 thin films

Fan Zhang,Rong Jun Zhang,Zi Yi Wang,Yu Xiang Zheng,Song You Wang,Hai Bin Zhao,Liang Yao Chen,Xiao Bin Liu,An Quan Jiang

DOI: https://doi.org/10.3938/jkps.63.53

2013-01-01

Journal of the Korean Physical Society

Abstract:Polycrystalline Pb(Zr 0.35 Ti 0.65 )O 3 thin films prepared on Pt/Ti/SiO 2 /Si substrate by using solgel technique were characterized by using X-ray diffraction (XRD) and atomic force microscopy (AFM). The optical properties of the films were investigated by using spectroscopic ellipsometry (SE) with a four-phase optical model, air/roughness layer/PZT layer/Pt layer in the spectral range of 300–800 nm. The optical band gap of the films calculated following the Tauc’s Law was smaller than that of an amorphous PZT thin film with some microcrystals existing on the surface. The result indicates that the quantum-size effect leads to an increase in band gap when the crystalline dimensions become very small.
Dielectric and piezoelectric properties of the Ba0.92Ca 0.08Ti0.95Zr0.05O3 thin films grown on different substrate

Wei Li,Jigong Hao,Huarong Zeng,Jiwei Zhai

DOI: https://doi.org/10.1016/j.cap.2013.03.015

IF: 2.856

2013-01-01

Current Applied Physics

Abstract:Lead free Ba0.92Ca0.08Ti0.95Zr0.05O3 (BCZT) thin films were deposited on Pt/Ti/SiO2/Si and LaNiO3(LNO)/Pt/Ti/SiO2/Si substrates by a sol–gel processing technique, respectively. The effects of substrate on structure, dielectric and piezoelectric properties were investigated in detail. The BCZT thin films deposited on LNO/Pt/Ti/SiO2/Si substrates exhibit (100) orientation, larger grain size and higher dielectric tunability (64%). The BCZT thin films deposited on Pt/Ti/SiO2/Si exhibit (110) orientation, higher Curie temperature (75 °C), better piezoelectric property (d33 of 50 pm/V) and lower dielectric loss (0.02). The differences in dielectric and piezoelectric properties in the two kinds of oriented BCZT films should be attributed to the difference of structure, in-plane stress and polarization rotation in orientation engineered BCZT films.
Preparations and Dielectric Properties of Ba0.80Sr0.20TiO3/PbO–B2O3 Thick Films

R Wu,PY Du,WJ Weng,GR Han

DOI: https://doi.org/10.1016/j.matchemphys.2005.07.074

IF: 4.778

2006-01-01

Materials Chemistry and Physics

Abstract:Ba0.80Sr0.20TiO3/PbO–B2O3 thick films containing sol–gel derived Ba0.80Sr0.20TiO3 perovskite phase have been fabricated by using the PbO–B2O3 glass as a sintering aid. TG/DTA, XRD, SEM and an impedance analyzer were used to characterize the structure, microstructure and dielectric properties of the thick films. Compared with the conventional sintering at ≥1200°C, high densification of the thick films is achieved at temperature as low as 750°C by the high infiltration of the PbO–B2O3 liquid phase on the particles. Only the BST phase exists in the thick films sintered at ≤750°C by controlling the sintering temperature and time. The formation of the small amount of the Ba2TiO4 phase in the thick film sintered at 800°C results from the interdiffusion between the BST and the glass. The dielectric properties of the thick films show the dielectric relaxation various with the sintering temperature. Grain size and compositional fluctuation are two major factors affecting the broadening of ferroelectric to paraelectric transition for the BST phase in the thick films. The slight increase in dielectric loss results from the defects and vacancies generated by the interdiffusion.
Tunable dielectric properties of sol–gel derived (Pb0.35, Sr0.65) (Zr0.5, Ti0.5)O3 thin films for microwave application

Vijaya Bhasker,Urvashi Sharma,Gulshan Kumar,Ashok Kumar,Reji Thomas

DOI: https://doi.org/10.1007/s10854-021-06426-z

2021-06-29

Abstract:Ferroelectric (Pb0.35Sr0.65)(Zr0.5Ti0.5)O3 material with Curie temperature below room temperature was prepared by solution-gelation method on platinized silicon substrates. Structural and morphological evolution of the spin-coated films on Pt/ZrO2/SiO2/Si substrates as a function of annealing temperature were studied by X-ray diffraction and atomic force microscopy, respectively. Fully crystallized film with perovskite structure was obtained at an annealing temperature of 600 °C. Root-mean-square roughness of the 300 nm film was around 4.5 nm, manyfold higher than the underlying Pt substrate (~ 1 nm). Electrical properties of the fully crystallized films were studied as functions of frequency and temperature with an impedance analyzer. Dielectric constant and loss tangent were around 200 and 0.02, respectively, at a frequency 100 kHz. Dielectric tunability of the films with bias voltage and frequencies was studied and 45% tunability obtained at 500 kV/cm. The quality factor or the figure of merit of the (Pb0.35Sr0.65)(Zr0.5Ti0.5)O3 films were determined from the tunability/loss tangent ratio and found to be 16 at 500 kV/cm.
High Dielectric Permittivity and Low Dielectric Loss in Sol–gel Derived Zn Doped CaCu3Ti4O12 Thin Films

Dong Xu,Kai He,Renhong Yu,Xiujuan Sun,Yongtao Yang,Hongxing Xu,Hongming Yuan,Jing Ma

DOI: https://doi.org/10.1016/j.matchemphys.2015.01.007

IF: 4.778

2015-01-01

Materials Chemistry and Physics

Abstract:Zn-doped CaCu3-xZnxTi4O12 high dielectric films with low dielectric loss were prepared by the sol-gel method; their crystalline structure, microstructure and electrical properties were investigated. A new method, XRD complemented by CLSM, was used to prove the presence of ZnO in CCZTO films, indicating the existence of the Cu2+ vacancy which influenced the electrical properties directly. The average grain size enlarged with the increased Zn doping amounts. All the samples showed strong non-ohmic properties. Higher nonlinear coefficient and lower leakage current depended on the increased V-cu '' concentration. It is significant that the Zn doping effectively reduced the dielectric loss in the low and medium frequency region even though the Zn doping led to the dielectric constant decreased compared to the pure CCTO film. At x = 0.20, the minimum dielectric loss of 0.015 can be observed around 22 000 Hz, which is the best-reported value in CCTO-based material. (C) 2015 Elsevier B.V. All rights reserved.

Dielectric properties of Ba(Zn 1/3 Ta 2/3 )O 3 thin films derived from a sol-gel process

Dielectric Properties And High Tunability Of Ba(Ti0.7zr0.3)O-3 Ceramics Under Dc Electric Field

Dielectric properties of sol-gel derived barium-strontium-titanate (Ba(0.4)Sr(0.6)TiO(3)) thin films

Preparation and Structure of Ba(Mg 1/3 Ta 2/3 )O 3 Thin Films Derived from a Sol-Gel Process

In-plane Dielectric Properties of Epitaxial 0.65pb(mg1∕3nb2∕3)o3−0.35pbtio3 Thin Films in a Very Wide Frequency Range

DIELECTRIC BEHAVIORS OF ZnFe2O4 – SiO2 COMPOSITE THIN FILMS PREPARED BY SOL-GEL METHOD

Dielectric Properties of Oriented PbZrO3 Thin Films Grown by Sol-Gel Process

Colossal Dielectric Performance of Pure Barium Titanate Ceramics Consolidated by Spark Plasma Sintering

Crystallization, phase evolution and ferroelectric properties of sol-gel-synthesized Ba(Ti0.8Zr0.2)O3-x(Ba 0.7Ca0.3)TiO3 thin films

Sol–gel derived Pb(Zr,Ti)O3 thin films: Residual stress and electrical properties

Preparation on the [(Pb,La) (Zr,Ti)O3] ferroelectric thin films by using the Sol-Gel processing

Effect of annealing temperature on the energy storage properties of Ba(Zr0.35Ti0.65)O3 thin films prepared by sol–gel method

SOL-GEL DERIVED BaTiO3 THIN FILMS WITH EMBEDDED SILVER NANOPARTICLES: PREPARATION AND DIELECTRIC PROPERTIES

Synthesis, Characterization and Electrical Properties of Barium Titanate Films Fabricated by Hydrothermal Method

Growth, Structure And Dielectric Characteristics Of Ba[(Fe1/2nb1/2)(0.1)Ti-0.9]O-3 Thin Films By Pulsed Laser Deposition

Composition and Temperature Dependent Electrical Properties of BaTiO 3 :Zno Composites

Structural characterization and optical properties of Sol-gel-derived polycrystalline Pb(Zr 0.35 Ti 0.65 )O 3 thin films

Dielectric and piezoelectric properties of the Ba0.92Ca 0.08Ti0.95Zr0.05O3 thin films grown on different substrate

Preparations and Dielectric Properties of Ba0.80Sr0.20TiO3/PbO–B2O3 Thick Films

Tunable dielectric properties of sol–gel derived (Pb0.35, Sr0.65) (Zr0.5, Ti0.5)O3 thin films for microwave application

High Dielectric Permittivity and Low Dielectric Loss in Sol–gel Derived Zn Doped CaCu3Ti4O12 Thin Films