Microstructure and Properties of BaTiO3 Ferroelectric Films Prepared by DC Micro Arc Oxidation
min wang,guoge zhang,wenfang li,xiaojun wang
DOI: https://doi.org/10.1002/bkcs.10220
2015-01-01
Bulletin of the Korean Chemical Society
Abstract:In this paper, we report the preparation of BaTiO3 (BT) ferroelectric films from barium hydroxide via micro arc oxidation (MAO) with additives. The BaTiO3 film was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), micro-Raman spectroscopy, precision LCR measurements, and a Radiant Precision LC material analyzer. The results showed that the BT film was mainly composed of tetragonal-phase BaTiO3, and the BT film was smooth, dense, and crack-free. At the frequency of 100 Hz, the film was found to possess a high dielectric constant of 245.3 and a low dielectric loss (tan delta) of 0.039. Compared with the BT film prepared without additives, the MAO-prepared film showed an increase of 61.1% in dielectric constant and a decrease of 59.4% in dielectric loss (tan delta). The BT film exhibited a saturated P-E hysteresis loop at room temperature.