Abstract:High-density nitrogen plasma was produced using a high-power pulsed power modulator to sputter titanium targets for the preparation of titanium nitride film. The high-power pulsed sputtering discharge unit consisted of two targets facing each other with the same electrical potential. The titanium target plates were used as target materials with dimensions of 60 mm length, 20 mm height, and 5 mm thickness. The gap length was set to be 10 mm. The magnetic field was created with a permanent magnet array behind the targets. The magnetic field strength at the gap between the target plates was 70 mT. The electrons were trapped by the magnetic and electric fields to enhance the ionization in the gap. The nitrogen and argon gases were injected into the chamber with 4 Pa gas pressure. The applied voltage to the target plates had an amplitude from −600 V to −1000 V with 600 μs in pulse width. The target current was approximately 10 A with the consumed power of 13 kW. The discharge sustaining voltage was almost constant and independent of the applied voltage, in the same manner as the conventional normal glow discharge. The ion density and electron temperature at the surface of the ionization region were obtained as 1.7 × 1019 m−3 and 3.4 eV, respectively, by the double probe measurements. The vertical distribution of ion density and electron temperature ranged from 1.1 × 1017 m−3 (at 6 cm from the target edge) to 1.7 × 1019 m−3 and from 2.4 eV (at 6 cm from the target edge) to 3.4 eV, respectively. From the emission spectra, the intensities of titanium atoms (Ti I), titanium ions (Ti II), and nitrogen ions (N2+) increased with increasing input power. However, the intensities ratio of Ti II to Ti I was not affected by the intensities from N2+.

Production of Intense Atomic Nitrogen Beam Used for Doping and Synthesis of Nitride Film

Production of Intense Atomic Nitrogen Beam Used for Doping and Synthesis of Nitride Film by Pulsed Laser Ablation

An Arc Discharge Nitrogen Atom Source

Optical Emission Spectroscopy of the Nitrogen Arc in an Arc-Heated Beam Source Used for Synthesis of Carbon Nitride Films

Synthesis of Carbon Nitride Films by Arc-Heated Atomic Nitrogen Beams Assisted Pulsed Laser Ablation

Development and Diagnostic Study of the RF Nitrogen Atom Source

Production of High-Power Nitrogen Sputtering Plasma for TiN Film Preparation

Preparation of Metal Nitride Particles Using Arc Discharge in Liquid Nitrogen

Investigation of carbon nitride films by cathodic arc evaporation

Formation Of Nanocrystalline Tin Film By Ion-Beam-Enhanced Deposition

Effects of Nitrogen on Formation and Properties of Diamondlike Films Synthesized by Dual Ion Beam Deposition

Substitutional Nitrogen Doping of Tetrahedral Amorphous Carbon

Ion-beam-assisted Deposition of CNx Films

Carbon Nitride Films Synthesized By Combined Ion-Beam And Laser-Ablation Processing

Investigation of nitrogen ionization state and its effect on the nitride layer during fiber laser gas nitriding of Ti-6Al-4V alloy

Low energy solid intense ion beams extracted by electron beam evaporation ion source for material modifications

Enhancing surface production of negative ions using nitrogen doped diamond in a deuterium plasma

Synthesis of Nanocrystalline Carbon Nitride Films by Glow Discharge Plasma Beam Deposition

Use of an energetic ion beam on the surface during physical vapor deposition

XPS studies of nitrogen doping niobium used for accelerator applications

Carbon nitride films synthesized by the reactive ionized cluster beam technique