Abstract:Low-pressure plasmas, in particular magnetron sputtering discharges, are increasingly used for the deposition of wideband gap semiconductor nitrides films (e.g., GaN or AlN) considering many benefits they exhibit with respect to conventional chemical vapor deposition techniques. Plasma-based solutions enable the dissociation of N2 molecules into N-atoms under conditions that would not be possible with the thermal process. However, as the dissociation rate remains quite small due to the strong nitrogen triple bond, it is somewhat complicated to determine and correlate the N-atoms density in the gas phase with that of the grown film in low-pressure discharges. Therefore, ns-two-photon absorption laser induced fluorescence (TALIF) has been carried out to determine the absolute density of N-atoms as a function of the pressure (tens of Pa range) in a radio-frequency sputtering plasma reactor used for GaN deposition. The TALIF set-up has been optimized using a monochromator and adequate signal processing to enhance the detection limit, enabling the measurement of N-atoms density as low as 1011 cm−3 at 15 Pa. These measurements have been completed with electron density measurements performed in the same pressure range using microwave interferometry, thus providing quantitative data on both electron and N-atom densities that can be used for fundamental understanding, process optimization, and modeling of magnetron discharge intended for nitride semiconductor deposition.

Production of Intense Atomic Nitrogen Beam Used for Doping and Synthesis of Nitride Film by Pulsed Laser Ablation

Production of Intense Atomic Nitrogen Beam Used for Doping and Synthesis of Nitride Film

Optical Emission Spectroscopy of the Nitrogen Arc in an Arc-Heated Beam Source Used for Synthesis of Carbon Nitride Films

An Arc Discharge Nitrogen Atom Source

Synthesis of Carbon Nitride Films by Arc-Heated Atomic Nitrogen Beams Assisted Pulsed Laser Ablation

Spectroscopic Study on Pulsed Laser Ablation of Graphite Target in Ecr Nitrogen Plasma for Carbon Nitride Film Deposition

Enhancement of the properties of pulsed laser-deposited carbon nitride by the synchronisation of laser and N2 gas jet pulses

Synthesis of C3N4+ by the Combination of Laser Ablation of Graphite and N2 Molecular Beam

Development and Diagnostic Study of the RF Nitrogen Atom Source

Spectroscopic Characterization of the Plasma Generated During the Deposition of AlxGa1−xN Films by Pulsed Laser Co-Ablation of Al and GaAs Targets in Electron Cyclotron Resonance Nitrogen Plasma

Resonantly excited betatron hard X-Rays from Ionization Injected Electron Beam in a Laser Plasma Accelerator

Silicon nitride films synthesized by reactive pulsed laser deposition in an electron cyclotron resonance nitrogen plasma

Characterization and modification of carbon nitride films deposited by laser ablation under low energy ion‐beam bombardment

A New Reactive Pulsed Laser Ablation Technique for the Deposition of Hard Carbon and Carbon-Nitride Thin Films

Atomic Nitrogen Laser Action in A Hollow-Cathode Discharge

Ion-beam-assisted Deposition of CNx Films

Carbon Nitride Films Synthesized By Combined Ion-Beam And Laser-Ablation Processing

Simultaneous Generation Of Quasi-Monoenergetic Electron And Betatron X-Rays From Nitrogen Gas Via Ionization Injection

Enhanced Coherent Emission from Ionized Nitrogen Molecules by Femtosecond Laser Pulses.

Low-temperature Synthesis of AlN Films Through Electron Cyclotron Resonance Plasma-Aided Reactive Pulsed Laser Deposition

Nitrogen atoms absolute density measurement using two-photon absorption laser induced fluorescence in reactive magnetron discharge for gallium nitride deposition