Ring Structure in the Interfacial Region of Nanocrystalline Silicon Films

WQ Han,GR Han,ZS Ding,SZ Wei,ZS Mao,JH Zhang

IF: 18.9

1996-01-01

Science Bulletin

Abstract:The nanocrystalline materials have been extensively developed in many fields of materials science due to their high-density interfaces and novel properties. In recent years, more and more attention has been paid to the investigation of nanocrystalline silicon films

What problem does this paper attempt to address?

Study on structural properties of nanocrystalline silicon films

WeiQiang Han,Gaorong Han,ZiShang Ding

1996-01-01

Abstract:Nanocrystalline silicon (nc-Si:H) films with an average grain size ranging from 2nm to 10nm were prepared by a plasma glow discharge CVD method. X-ray diffraction, high resolution electron microscopy (HREM) were used to elucidate the structural nature in the nanocrystalline silicon films. The results show that the crystal lattice of the nanocrystalline silicon is a deformed diamond lattice. In the observed X-ray diffraction, there is an anomalous peak at 2��=32.5�� of Si besides the normal peaks at 2��=28.5�� of Si (111) and 2��=47.3�� of Si(220). the results of HREM show that a new crystallographic structure of silicon is found. The crystalline fraction of the network structure of silicon films increases with the increasing of RF power.
Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

XW Zhang,GR Han

DOI: https://doi.org/10.1016/s0040-6090(02)00503-5

IF: 2.1

2002-01-01

Thin Solid Films

Abstract:Large-area thin films of silicon consisting of an amorphous matrix with embedded silicon nanocrystallites were deposited on glass substrates using a specially-designed thermal-assisted chemical vapor deposition technique that is compatible with the mature silicon technology. Under this way, the typical nanocrystalline silicon film was grown at 660 °C with crystallization ratio of over 50% and average silicon crystallite size approximately 8–12 nm. The deposition temperature and the post-annealing procedure determine the nanocrystalline Si fraction in the amorphous matrix, which affects the room-temperature dark conductivity of the film. The thermal-assisted tunneling of carriers between neighboring silicon nanocrystallites embedded in amorphous matrix was suggested, which coincides with the theory of hetero-quantum dots.
Structural Nature of Nanocrystalline Silicon

Han Weiqiang,Han Gaorong,Santa Clara University,Du Piyi,Ding Zhishang,Xu Jing,Shen Zhijian

DOI: https://doi.org/10.1557/proc-297-381

1993-01-01

MRS Proceedings

Abstract:Nanocrystalline silicon (nc-Si:H) films with an average grain size ranging between 2 and 10 nm are prepared in a modified plasma chemical vapor deposition system. X-ray diffraction, transmission electron diffraction, and high resolution electron microscope are used to elucidate the structural nature in the deposited nc-Si:H films. The lattice network of the deposited silicon films changes from disordered structure to ordered structure with the increasing of plasma energy. The results also show that the crystal lattice of the nc-Si:H film is distorted from those of microcrystalline silicon and crystalline silicon. In the observed x-ray diffraction, there are two anomalous peaks at 2θ = 29.5° and 32.5° of Si besides the normal peaks at 2θ = 28.5° of Si(111) and 2θ = 47.3° of Si(220). By the high resolution electron microscopy study, a new crystallography structure with distorted Si(111) crystallites in nc-Si:H films is found. Based on our results, a structure model of nc-Si:H films is proposed.
Nanocrystalline Materials and Interfacial Microstructure

袁斌,曾美琴

DOI: https://doi.org/10.3321/j.issn:1005-023X.2002.12.002

2002-01-01

Abstract:Research work on interfaclal microstructure in nanocrystalhne materials in recent years is briefly reviewed,with focus on theoretic models of interfacial microstructure in nanocrystalline.The effect of triple line boundary on interfacial microstructure and properties,and some other problems about interfacial microstructure are also discussed.
Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Bin Lu,Wende Xiao,Sunil Singh Kushvaha,Pimo He,Xue-Sen Wang

DOI: https://doi.org/10.1088/0953-8984/20/22/225015

2008-01-01

Journal of Physics Condensed Matter

Abstract:Using in situ scanning tunneling microscopy and low-energy electron diffraction, we performed investigations on the growth of zirconium silicide on vicinal and flat Si(111)-7 x 7 surfaces. In the case of a solid-phase reaction, submonolayer zirconium deposition onto vicinal Si followed by successive annealing results in the formation of zirconium silicide nanostructures, which are distributed randomly on the surface. These nanostructures evolved into rod-shaped islands with axes running along the substrate <(1) over bar 10 > directions at the late stage of the coarsening process. When 2-3 monolayers of Zr are deposited on Si at 520 degrees C, an extended network with rod-like silicide domains was developed, which is controlled by the elastic strain-relief mechanism. The atomic structures of these silicide features were identified and they are considered to adopt C49 ZrSi2. The reaction and growth on a flat surface with less Zr coverage at higher temperatures led to the formation of longer and narrower nanowires. The relations between the variety of nanostructures and the different growth conditions are addressed.
Microstructures and Characteristics of Nanosize Crystalline Silicon Films

LC WANG,D FENG,Q LI,YL HE,YM CHU

DOI: https://doi.org/10.1088/0953-8984/4/40/001

1992-01-01

Abstract:Microstructures and characteristics of nano-size hydrogenated crystalline silicon films (nc-Si:H) have been studied by high-resolution electron microscopy (HREM), x-ray diffraction patterns and Raman spectroscopy. The microcrystalline grains in nc-Si:H films are about 3-5 nm in size and are separated by different characteristic boundaries. The volume fraction of the crystalline component is about 46%. Micro-defects in nanocrystalline grains were also found. The electrical conductivities of the films were found by measurement to be about 10(-3)-10(-2) (OMEGA cm)-1. Analysis of the experimental results shows that the nano-size hydrogenated crystalline silicon films are in good agreement with the international definition of nanocrystalline material.
Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Y. Liu,H. -H. Wang,G. Bian,Z. Zhang,S. S. Lee,P. A. Fenter,J. Z. Tischler,H. Hong,T. -C. Chiang

DOI: https://doi.org/10.1103/physrevlett.110.226103

IF: 8.6

2013-01-01

Physical Review Letters

Abstract:Interfacial topological states are a key element of interest for topological insulator thin films, and their properties can depend sensitively on the atomic bonding configuration. We employ in situ nonresonant and resonant surface x-ray scattering to study the interfacial and internal structure of a prototypical topological film system: Bi2Te3 grown on Si(111). The results reveal a Te-dominated buffer layer, a large interfacial spacing, and a slightly relaxed and partially strained bottom quintuple layer of an otherwise properly stacked bulklike Bi2Te3 film. The presence of the buffer layer indicates a nontrivial process of interface formation and a mechanism for electronic decoupling between the topological film and the Si(111) substrate.
Structure And Energetics Of C-Si/A-Sio2 Systems: Planar Interfaces And Embedded Si Nanocrystals

LingTi Kong,Laurent Lewis

DOI: https://doi.org/10.1103/PhysRevB.77.085204

IF: 3.7

2008-01-01

Physical Review B

Abstract:We use Monte Carlo simulations to study the properties of the interfaces between c-Si and a-SiO2, more specifically planar interfaces and interfaces between a-SiO2 and embedded Si nanocrystals (NCs). We find that the Si(111)/a-SiO2 interface with suboxide Si+1 only has the lowest interfacial energy among the planar cases considered. We also find that embedded NCs smaller than similar to 20 A have even lower interfacial energy, suggesting that a faceted shape is favorable only for large NCs. No significant differences are observed between normal and twinned NCs, indicating that the experimentally observed stacking faults might result from the coalescence of small defect-free NCs.
Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

HE Hai-yan,LI Xiang,HAN Gao-rong

DOI: https://doi.org/10.3969/j.issn.1002-0322.2012.01.011

IF: 4

2012-01-01

Vacuum

Abstract:Aluminum-induced crystallization of amorphous silicon has been studied as a promising low-temperature alternative to solid-phase and laser crystallization.In our work,comparison of the influence on crystallization between novel Al/α-Si/Al sandwich structure and normal Al/α-Si bilayer structure was investigated.The results show that in the same preparation and annealing conditions the former structure is more beneficial to the formation of high crystallized polysilicon thin film.Raman spectroscopy,grazing-incidence X-ray diffraction,optical microscopy and four-point probe measurement were employed to study the effects of Al/α-Si thickness ratio and annealing temperature on the crystallization degree,crystal structure and electrical properties.High-quality continuous polycrystalline silicon with resistivity of 2.5 Ω·cm by aluminum-induced crystallization was prepared.
Diffusive crack-grain interplay in freestanding nanocrystalline silver thin film

Junxia Lu,Qi Zhu,Jin Wang,Hua Wei,Jiangwei Wang,Yuefei Zhang,Ze Zhang

DOI: https://doi.org/10.1016/j.mtla.2021.101116

2021-01-01

Materialia

Abstract:Crack dynamics typically controls the deformation and fracture of nanocrystalline (NC) metallic materials, while the ubiquitous interplay between nanograins and propagating cracks remains unclear. Here, using in situ nanomechanical testing inside transmission electron microscope, we clarify the atomistic interplay between GB evolution and crack propagation in NC silver (Ag) thin films, where the cooperative GB migration, GB re-orientation and nanograin nucleation activated ahead of the crack tip result in conspicuous crack blunt. This grain-crack interplay is critically facilitated by the diffusive plasticity associated with crack propagation, which yields dynamically modified crack tip morphology and rate-limiting intragranular cracking. These atomistic mechanisms of diffusive crack-grain interplay enrich our understanding of the cooperative deformation behaviors in nanograin regime and hold general implications to enhance the fracture resistance of NC metallic materials.
Phase Transformations of Monocrystalline Silicon Surface under Nanoparticle Collision

Duan Fang-Li,Wang Jia-Xu,Luo Jian-Bin,Wen Shi-Zhu

DOI: https://doi.org/10.7498/aps.56.6552

IF: 0.906

2007-01-01

Acta Physica Sinica

Abstract:The phase transformation and the structure change of the silicon surface are investigated by molecular dynamics simulation of the incidence and recoil of a nanoparticle at the monocrystlline silicon surface. The simulation shows that during the collision process, the impacted region on the silicon surface transforms from diamond structure to a molten state, then goes through the state of supercooled liquid, and finally solidifies into an amorphous phase. Furthermore, the temperature of solidification transformation calculated from the simulation is very close to the glass transition temperature of silicon. The structure changes taking place during the nanoparticles recoiling process are also revealed. Beginning with an instantaneous, highly disordered, and badly depressed supercooled state, the impacted region evolves along the direction to a more ordered and lessdepressed state. These evolutional tendencies are determined by the cooling andunloading process the impacted region undergoes. The amorphous silicon formed after the collision has the average coordination of 5.27, and the fivefold and sixfold coordinated atoms accounts for 61.5% of the whole atoms in the impacted region.
Structure Of Nc-Si : H Films

Gr Han,Xw Zhang,Gh Shi,Dk Shen,Wq Han,Py Du

2000-01-01

Abstract:Hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared by a glow discharge plasma chemical vapor deposition system using heavy hydrogen diluted silane. The structural properties of the deposited films were evaluated by means of Raman spectrometer, high resolution electron microscopy and x-ray diffraction pattern. Effects of the gas flow ratio of SiH4/H-2 and RF power density on the crystallization and microstructure of nc-Si:H films are described. An interpretation of these results is suggested.
Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates

QJ Gao,LP You,XH Pan,F Zhang,XF Peng,ZD Lin

DOI: https://doi.org/10.1088/0256-307x/14/2/019

1997-01-01

Chinese Physics Letters

Abstract:Epitaxial diamond films on non-mirror polished silicon substrate was achieved using hot filament chemical vapor deposition method with one flat horizontal filament. The orientation relationship of epitaxial diamond films on silicon substrate has been investigated by cross-sectional high-resolution transmission electron microscopy. We found one excellent epitaxial configuration and according to the experimental result we suggest a corresponding model. The lattice misfit is only 0.1-2.8% related to our model and the analysis of 60° type interface dislocation also supports this model.
Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

Solomon Agbo,Pavol Sutta,Pavel Calta,Rana Biswas,Bicai Pan

DOI: https://doi.org/10.1139/cjp-2013-0442

2014-01-01

Canadian Journal of Physics

Abstract:We have synthesized silicon nanocrystalline structures from thermal annealing of thin film amorphous silicon-based multilayers. The annealing procedure that was carried out in vacuum at temperatures up to 1100 °C is integrated in a X-ray diffraction (XRD) setup for real-time monitoring of the formation phases of the nanostructures. The microstructure of the crystallized films is investigated through experimental measurements combined with atomistic simulations of realistic nanocrystalline silicon (nc-Si) models. The multilayers consisting of uniformly alternating thicknesses of hydrogenated amorphous silicon and silicon oxide (SiO2) were deposited by plasma enhanced chemical vapor deposition on crystalline silicon and Corning glass substrates. The crystallized structure consisting of nc-Si structures embedded in an amorphous matrix were further characterized through XRD, Raman spectroscopy, and Fourier transform infrared measurements. We are able to show the different stages of nanostructure formation and how the sizes and the crystallized mass fraction can be controlled in our experimental synthesis. The crystallized silicon structures with large crystalline filling fractions exceeding 50% have been simulated with a robust classical molecular dynamics technique. The crystalline filling fractions and structural order of nc-Si obtained from this simulation are compared with our Raman and XRD measurements.
Nanoindentation-induced interface behavior between DLC film and monocrystalline silicon substrate at high temperature: A molecular dynamics simulation study

Qingkang Liu,Yufei Hu,Xiaohong Zhu,Liang Peng,Ziyue Wang,Kaihao Huang,Zhen Chen,Wenkai Wu,Yao Zhang

DOI: https://doi.org/10.1016/j.mtcomm.2024.108205

IF: 3.8

2024-02-12

Materials Today Communications

Abstract:Diamond-like carbon (DLC) film is an excellent protective coating material, which has a wide range of applications. The interface behavior between around 1 nm DLC film and the monocrystalline silicon substrate is difficult to characterize through experiments. In this work, the nanoindentation molecular dynamics simulations are performed to investigate the interface behavior between DLC film and the silicon substrate at high temperature. A method for determining the depth of indentation has been proposed. As the temperature increases, the maximum repulsive force between indenter and DLC film decreases, the maximum adhesive force increases. High atomic shear strains locate at the interface between DLC and monocrystalline silicon during indentation process. High temperature enlarges the atomic strain distribution region. The number of holes in the monocrystalline silicon substrate increases with increase of temperature after indentation process. The evolution processes of silicon atomic structures have been revealed. Both the repulsive force and adhesive force in the indentation process contribute the silicon phase transformation. But the final silicon atom bonding structure and pop-out phenomena are determined by the adhesive force during the unloading process.

materials science, multidisciplinary
Evolution of structural topology of forming nanocrystalline silicon film by atomic-scale-mechanism-driven model based on realistic network

Yixiong Zhang,Hong Wang,Shaoji Jiang

DOI: https://doi.org/10.1063/1.5048674

IF: 1.697

2018-09-01

AIP Advances

Abstract:To establish a description of realistic structural evolution of a growth film, we propose a local definite continuous-random-network (CRN) structure combined with a kinetic Monte Carlo (KMC) method based on an atomic-scale mechanism from first-principles density-functional-theory computations and molecular-dynamics computations. The proposed CRN-KMC method elucidates the evolution of elaborate topological structure and the transformation from amorphous phase to nanocrystalline phase of Si films, which is essentially attributed to the atomic interactive behavior of film growth. The method further predicts the realistic structural networks of a growing film at various temperatures based on various atomic-scale mechanisms competing with each other, mechanisms that not only essentially drive the radical from physisorption to chemisorption with the film surface, but also decidedly influence the film-surface chemical composition. In particular, we find the evolution of topological structure’s critical dependence on the compositions of the film surface and H-induced crystallization mechanism, which provide the important information for the strategy for determining optimized deposition conditions for local crystal formation. The results of the evolution of the structural network indicate that the structure of film is similar the CRN model’s representation at relative lower temperature, and is in full agreement with the inhomogeneous crystalline model at relative higher temperature without an abrupt phase change from polycrystalline to amorphous. Our CRN-KMC realistic structure model has significance for exploring the relation of various atomic-scale mechanisms to the phase transformation of growing films.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
The Transparency of Cd(0001) Films Grown on Si(111)-7×7:Imaging the Interface at Atomic Scale

Xiao HuaFang,Hao ShaoJie,Sun Kai,Tao MinLong,Wang Yali,Xie ZhengBo,Tu YuBing,Ye Juan,Wang JunZhong

DOI: https://doi.org/10.1360/sspma2016-00374

2017-01-01

Abstract:The interfacial structure plays a crucial role in controlling the growth of epitaxial film. However, it is still a formidable task to observe the interface structure at the atomic scale, because the detected signals from the interface become very weak due to the strong attenuation and decoherence when the incident wave passes through the films. With the advent of scanning tunneling microscopy (STM), significant progress has been made in observing the interface structure of thin films. Many studies have demonstrated the typical Si(111)-7×7 superstructure below the metal films in the past. Although the 7×7 superstructures are visible, the 12 Si adatoms in the unit cells can not be resolved. Hence, imaging the 7×7 superstructures below thin films at the atomic scale has not been achieved. In this work, we have grown the Cd epitaxial films with high quality on Si(111)-7×7 substrate, and realized the imaging of interface structure of Cd(0001) at atomic scale by using low temperature scanning tunneling microscopy. Under low bias voltage, we can clearly observe the atomic image of Si(111)-7×7, indicating the Si (111)-7×7 substrate remains intact during the growth process of Cd films. Moreover, due to the quantum size effect, the Cd films with even or odd monolayers exhibit distinct lateral resolution as well as surface roughness, even at the same bias voltage. With the bias variation, such kind of diversities can be reversed. We attribute the highly transparency of Cd(0001) films to the anisotropic effective mass of the electrons in Cd films, i.e. the transverse motion is much faster than the in-plane motion.
Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Chao Song,Guran Chen,Jun Xu,Tianwei Wang,Hongcheng Sun,Yu Liu,Wei Li,Zhongyuan Ma,Ling Xu,XinFan Huang,Kunji Chen

DOI: https://doi.org/10.1063/1.3087500

IF: 2.877

2009-01-01

Journal of Applied Physics

Abstract:Hydrogenated amorphous Si thin films were prepared by plasma-enhanced chemical vapor deposition technique. As-deposited samples were thermally annealed at various temperatures to obtain nanocrystalline Si. The microstructures and carrier transport behaviors were evaluated during the transition process from amorphous to nanocrystalline structures. Raman scattering spectroscopy and Fourier-transform infrared spectroscopy were used to characterize the changes in microstructures and bonding configurations. It is found that hydrogen is completely effused from the film at the annealing temperature of 600 degrees C, while crystallization occurs at around 700 degrees C. The carrier transport characteristics in nanocrystallized films are different from those in the amorphous Si films. The carrier transport in the amorphous silicon films is strongly influenced by the defect states resulting from the effusion of hydrogen. The dual activation energies are found in temperature-dependent conductivity results which can be attributed to the two different conduction paths in the samples. In the case of the nanocrystallized Si films obtained by high temperature annealing, the transport process is accounted for in the framework of a three-phase model comprised of amorphous and nanocrystalline phases and the grain boundary in the films.
A Study of Interface Structure Between Diamond Film and Silicon Substrate

QJ GAO,H YUAN,X ZHANG,XB FEN,JH LI,YC YANG,ZD LIN,XF PEN,BX YANG,GS JIANG,FX LU

DOI: https://doi.org/10.1016/0040-6090(92)90792-a

IF: 2.1

1992-01-01

Thin Solid Films

Abstract:Diamond thin films have been successfully grown on Si(100) substrates at low temperatures from 315°C to 685°C by a microwave plasma chemical vapour deposition system. It is found that when oxygen is added to the CH4H2 gas mixtures at low temperature (below 600°C) the first step is the formation of SiO2 on the silicon substrate, and a diamond film is formed on SiO2.
Phase stability and the interface structure of a nanoscale Si crystallite in Al-based alloys

Lu Lu,Yao-Xiang Geng,Ying-Min Wang,Jian-Bing Qiang,Shao-Bo Mi

DOI: https://doi.org/10.1039/d2nr02581g

IF: 6.7

2022-07-21

Nanoscale

Abstract:An atomic-scale understanding of the role of strain on the microstructural properties of nanoscale precipitates will be helpful to explore the precipitation behavior as well as the structure-property relationships in crystalline multi-phase systems. Nanoscale Si precipitates are formed in Al-based alloys prepared by selective laser melting. The phase structure and the nature of heterointerface have been characterized using advanced electron microscopy. The nanocrystalline Si mainly contains two polymorphs, diamond-cubic Si (DC-Si) and 4H hexagonal Si (4H-Si). Heteroepitaxy occurs at the DC-Si(111)/Al(100) and 4H-Si(0001)/Al(100) interfaces in terms of a coincidence-site lattice model. The nanocrystalline Si undertakes tensile strain superposed by the matrix through heterointerfaces, facilitating the formation of 4H-Si in the nanoscale crystallite, which provides a strategy for designing Si polymorphic materials by strain engineering.

Ring Structure in the Interfacial Region of Nanocrystalline Silicon Films

Study on structural properties of nanocrystalline silicon films

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Structural Nature of Nanocrystalline Silicon

Nanocrystalline Materials and Interfacial Microstructure

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Microstructures and Characteristics of Nanosize Crystalline Silicon Films

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Structure And Energetics Of C-Si/A-Sio2 Systems: Planar Interfaces And Embedded Si Nanocrystals

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Diffusive crack-grain interplay in freestanding nanocrystalline silver thin film

Phase Transformations of Monocrystalline Silicon Surface under Nanoparticle Collision

Structure Of Nc-Si : H Films

Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates

Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

Nanoindentation-induced interface behavior between DLC film and monocrystalline silicon substrate at high temperature: A molecular dynamics simulation study

Evolution of structural topology of forming nanocrystalline silicon film by atomic-scale-mechanism-driven model based on realistic network

The Transparency of Cd(0001) Films Grown on Si(111)-7×7:Imaging the Interface at Atomic Scale

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

A Study of Interface Structure Between Diamond Film and Silicon Substrate

Phase stability and the interface structure of a nanoscale Si crystallite in Al-based alloys